NTE88MP (Matched Pair) Silicon NPN/PNP Transistors 10A 250V High Power Audio Disk Head Positioner for Linear Applications TO-3

Info as pdf-file

Matched pairs have their gain specification (hFE) matched to within 10% of each other.

See also >>> NTE87 (NPN) See also >>> NTE88 (PNP)

Description:

The NTE87 (NPN) and NTE88 (PNP) are silicon complementary transistors in a TO3 type case designed for high-power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC converters, or inverters.

Features:

• High Safe Operating Area
• Completely Characterized for Linear Operartion
• High DC Current Gain and Low Saturation Voltage
• For Low Distortion Complementary Designs

Absolute Maximum Ratings:

Collector-Emitter Voltage, VCEO	250V
Collector-Emitter Voltage, VCEX	250V
Emitter-Base Voltage, VEBO	5V
Collector Current, IC Continuous Peak (Note 1)	10A 15A
Base Current, IB Continuous Peak (Note 1)	2A 5A
Emitter Current, IE Continuous Peak (Note 1)	12A 20A
Total Device Dissipation (TC = +25°C), PD	200W
Derate above 25°C	1.14W/°C
Operating Junction Temperature Range, TJ	-65° to +200°C
Storage Temperature Range, Tstg	-65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC	0.875°C/W
Maximum Lead Temperature (During Soldering), TL	+265°C

Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle < 10%.

Electrical Characteristics: (T_C = +25°C unless otherwise specified)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 100mA, Note 2	250	-	-	V
Collector Cutoff Current	ICEO	VCE = 200V	-	-	1	mA
	ICEX	VCE = 250V, VEB(off) = 1.5V	-	-	500	µA
Emitter Cutoff Current	IEBO	VBE = 5V	-	-	500	µA
ON Characteristics (Note 2)
DC Current Gain	hFE	IC = 2A, VCE = 2V	20	-	100
		IC = 4A, VCE = 2V	5	-	-
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 2A, IB = 0.2A	-	-	0.8	V
		IC = 4A, IB = 0.4A	-	-	2.5	V
Base-Emitter ON Voltage	VBE(on)	IC = 4A, VCE = 2V	-	-	2	V
Dynamic Characteristics
Output Capacitance	Cob	VCB = 10V, f = 1MHz	-	-	750	pF
Second Breakdown
Second Breakdown Collector Current with Base Forward Biased	IS/b	VCE = 40V, t = 0.5s	5	-	-	A
		VCE = 100V, t = 0.5s	1.4	-	-	A

Note 2. Pulse Test: Pulse Width

Pictures are a guide only actual product may vary. Subject to alterations and errors. Help us to eliminate errors:
Please report any errors here.


Are you searching for replacements of semiconductors? The following link brings you to the search window of NTE Electronics (a world wide supplier of high quality electronic components). This QUICKCross software can assist users in selecting the proper NTE replacement device.

QUICKCross Search Engine for NTE Replacement Semiconductors
Our Assortment of NTE- Replacement Devices

Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications. Sprachen integrierter Schaltkreis integrated circuit, kurz IC, Mikrochip Microchip integreret kredsløb integreret kredslob circuito integrado (CI) circuit intégré (CI) circuit integre (CI) circuito integrato geïntegreerde schakeling geintegreerde schakeling Tümdevre Tuemdevre EEE