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ab 10 4.06CHF
ab 50 3.78CHF
ab 100 3.53CHF

NTE5402 SCR Silicon Controlled Rectifier 0.8A 100V TO-92

Bestell-Nr.:    NTE5402


Availability:     PICTURE_ONLY_THREE
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NTE5402 NTE-5402 | ECG5402 ECG-5402 | NTE Electronics NTE5402
Silicon Controlled Rectifier (SCR) 100V 0.8Amp Sensitive Gate TO-92

See also >>> NTE5400 thru NTE5406

Description:
The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR-thyristor) rated at 0.8 amps RMS maximum on-state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millamp holding current and 8 amp surge capabilities. Available in a TO-92 plastic package, these devices feature excellent environmental stress and temperature cycling characteristics and, coupled with their small size and electrical performance, lend themselves to various types of control functions encountered with sensors, motors, lamps, relays, counters, triggers, etc.

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +100°C), VRRM
NTE5400.................................................................... 30V
NTE5401.................................................................... 60V
NTE5402...................................................................100V
NTE5403...................................................................150V
NTE5404...................................................................200V
NTE5405...................................................................400V
NTE5406...................................................................600V
Repetitive Peak Off-State Voltage (TC = +100°C), VDRXM
NTE5400.................................................................... 30V
NTE5401.................................................................... 60V
NTE5402...................................................................100V
NTE5403...................................................................150V
NTE5404...................................................................200V
NTE5405...................................................................400V
NTE5406...................................................................600V
RMS On-State Current, IT(RMS).....................................................0.8A
Peak Surge (Non-Repetitive) On-State Current (One Cycle at 50 or 60Hz), ITSM............ 8A
Peak Gate-Trigger Current (3μs Max), IGTM........................................ 500mA
Peak Gate-Power Dissipation (IGT ≤ IGTM for 3μs Max), PGM...........................20W
Average Gate Power Dissipation, PG(AV)...........................................200mW
Operating Temperature Range, Topr........................................ -40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Typical Thermal Resistance, Junction-to-Case, RthJC.............................. +5°C/W
Typical Thermal Resistance, Junction-to-Ambient, RthJA.......................... +200°C/W


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