NTE2515 NPN Si-Transistor High Current Switch 4A 100V tf=50ns TO-126M
Silicon Complementary Transistors High Current Switch

See also >>> NTE2516 (PNP)

Features:
- Low Collector Emitter Saturation Voltage
- High Gain-Bandwidth Product
- Excellent Linearity of hFE
- Fast Switching Time

Applications:
- Display Drivers
- High Speed Inverters
- Converters

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO.......................................................120V
Collector Emitter Voltage, VCEO.....................................................100V
Emitter Base Voltage, VEBO...........................................................6V
Collector Current, IC
Continuous...................................................................4A
Peak........................................................................ 8A
Collector Power Dissipation, PC
TA = +25°C.................................................................1.2W
TC = +25°C.................................................................20W
Operating Junction Temperature, TJ...............................................+150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C


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