NTE904 General Purpose Transistor Array 12-Pin Metal Can

Integrated Circuit General Purpose Transistor Array
(Two Isolated Transistors and a Darlington Connected Transistor Pair)
12-PIN METAL CAN

Info als pdf File

Description:

The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12-Lead TO5 type metal can. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility.

The transistors of the NTE904 are well suited to a wide variety of applications in the low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits but in addition they provide the advantages of close electrical and thermal matching inherent in integrated circuit construction.

Features:

• Matched Monolithic General Purpose Transistors
• Current Gain Matched to ±10%
• Base-Emitter Voltage Matched to ±2mV
• Operation from DC to 120MHz
• Wide Operating Current Range
• Low Noise Figure

Applications:

• General use in Signal Processing Systems in DC through VHF Range
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers

Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)

Collector-Emitter Voltage (Each Transistor), VCEO		15V
Collector-Base Voltage (Each Transistor), VCBO		30V
Collector-Substrate Voltage (Each Transistor, Note 1), VCIO		40V
Emitter-Base Voltage (Each Transistor), VEBO		5V
Collector Current (Each Transistor), IC		50mA
Power Dissipation, PD
Any One Transistor		300mW
Total Package		450mW
Derate Above 85°C		5mW/°C
Operating Temperature Range, Topr		-55°C to +125°C
Storage Temperature Range, Tstg		-65°C to +200°C

Note 1.

The collector of each transistor is isolated from the substrate by an integral diode. The substrate (Pin10) must be connected to the most negative point in the external circuit to maintain isolation betwen transistors and to provide for normal transistor action.

Electrical Characteristics: (T_A = +25°C unless otherwise specified)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Static Characteristics
Collector Cutoff Current	ICBO	VCB = 10V, IE = 0	-	0.002	-	nA
	ICEO	VCE = 10V, IB = 0	-	-	0.5	µA
Collector Cutoff Current (Darlington Pair)	ICEOD	VCE = 10V, IB = 0	-	-	5	µA
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 1mA, IB = 0	15	24	-	V
Collector-Base Breakdown Voltage	V(BR)CBO	IC = 10µA, IE = 0	30	60	-	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE = 10µA, IC = 0	5	7	-	V
Collector-Substrate Breakdown Voltage	V(BR)CIO	IC = 10µA, IC1 = 0	40	60	-	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 10mA, IB = 1mA	-	0.23	0.5	V
Static Forward Current Transfer Ratio	hFE	VCE = 3V, IC = 10mA	50	100	-
		VCE = 3V, IC = 1mA	60	100	200
		VCE = 3V, IC = 10µA	54	-	-
Magnitude of Static-Beta Ratio             (Isolated Transistors Q1 and Q2)		VCE = 3V, IC1 = IC2 = 1mA	0.9	0.97	-
Static Forward Current Transfer Ratio             (Darlington Pair Q3 and Q4)	hFED	VCE = 3V, IC = 1mA	2000	5400	-
		VCE = 3V, IC = 10µA	1000	2800	-
Base-Emitter Voltage	VBE	VCE = 3V, IE = 1mA	0.600	0.715	0.800	V
		VCE = 3V, IE = 10mA	-	0.800	0.900	V
Input Offset Voltage		VCE = 3V, IE = 1mA	-	0.48	2.0	mV
Temperature Coefficient of Base-Emitter Voltage             (Q1 - Q2)		VCE = 3V, IE = 1mA	-	1.9	-	mV / °C
Base (Q3) - Emitter (Q4) Voltage (Darlington Pair)	VBED	VCE = 3V, IE = 10mA	-	1.46	1.60	V
		VCE = 3V, IE = 1mA	1.10	1.32	1.50	V
Temperature Coefficient of Base-Emitter Voltage             (Darlington Pair Q3 - Q4)		VCE = 3V, IE = 1mA	-	4.4	-	mV / °C
Temperature Coefficient of magnitude of Input Offset Voltage		VCC = 6V, VEE = -6V, IC1 = IC2 = 1mA	-	10	-	µV / °C
Low Frequency Noise Figure	NF	VCE = 3V, IC = 100µA, f = 1kHz, RS = 1k Ohm	-	3.25	-	dB
Low Frequency, Small-Signal Equivalent Circuit Characteristics
Forward Current Transfer Ratio	hfe	VCE = 3V, IC = 1mA, f = 1kHz	-	110	-
Short-Circuit Input Impedance	hie		-	3.5	-	k Ohm
Open-Circuit Output Impedance	hoe		-	15.6	-	µmhos
Open-Circuit Reverse Voltage Transfer Ratio	hre		1.8 x 104 (Typ)
Admittance Characteristics
Forward Transfer Admittance	Yfe	VCE = 3V, IC = 1mA, f = 1kHz	31-j1.5 (Typ)			mmho
Input Admittance	Yie		0.3+j0.04 (Typ)			mmho
Output Admittance	Yoe		0.001+j0.03 (Typ)			mmho
Gain-Bandwidth Product	fT	VCE = 3V, IC = 3mA	300	500	-	MHz
Emitter-Base Capacitance	CEB	VEB = 3V, IE = 0	-	0.6	-	pF
Emitter-Base Capacitance	CEB	VEB = 3V, IE = 0	-	0.6	-	pF
Collector-Base Capacitance	CCB	VCB = 3V, IC = 0	-	0.58	-	pF
Collector-Substrate Capacitance	CCI	VCI = 3V, IC = 0	-	2.8	-	pF

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