NTE858SM Dual Low-Noise JFET-Input Operational Amplifier SOIC-8

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See also >>> NTE858M

Description:

The NTE858M and NTE858SM are dual, low-noise JFET input operational amplifiers combining two state-of-the-art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset voltage. The BIFET technology provides wide bandwidths and fast slew rates with low input bias currents, input offset currents, and supply currents. Moreover, these devices exhibit low-noise and low harmonic distortion making them ideal for use in high-fidelity audio applications.

Features:

• Low Input Noise Voltage
• Low Harmonic Distortion
• Low Input Bias and Offset Currents
• High Input Impedance
• High Slew Rate
• Wide Gain Bandwidth
• LOw Supply Current
• Available in 8-Lead Mini DIP (NTE858M) and Surface Mount SOIC-8 (NTE858SM)

Absolute Maximum Ratings:

Supply Voltage, VCC		+18V
Supply Voltage, VEE		-18V
Differential Input Voltage, VID		±30V
Input Voltage Range (Note 1), VIDR		±15V
Output Short-Circuit Duration (Note 2), tS		Continuous
Power Dissipation, PD		680mW
Derate Above +47°C		10mW/°C
Operating Ambient Temperature Range, TA		0°C to +70°C
Storage Temperature Range, Tstg		-65°C to +150°C

Note 1.	The magnitude of the input voltage must not exceed the magnitude of the supply voltage or 15V, whichever is less.
Note 2.	The output may be shorted to GND or either supply. Temperature and/or supply voltages must be limited to ensure that power dissipation ratings are not exceeded.

Electrical Characteristics: (V_CC = +15V, V_EE = -15V, T_A = +25°C, unless otherwise specified)

Parameter	Symbol	Test Conditions		Min	Typ	Max	Units
Input Offset Voltage	VIO	RS CM = 0		-	3	10	mV
			TA = 0° to +70°C	-	-	13	mV
Average Temperature Coefficient of Input Offset Voltage	VIO/T	TA = 0° to +70°C		-	10	-	µV/°C
Input Offset Current	IIO	VCM = 0, Note 3		-	5	50	pA
			TA = 0° to +70°C	-	-	2	nA
Input Bias Current	IIB	VCM = 0, Note 3		-	30	200	pA
			TA = 0° to +70°C	-	-	7	nA
Input Resistance	ri			-	1012	-	Ohm
Common Mode Input Voltage Range	VICR			±10	+15, -12	-	V
Large-Signal Voltage Gain	AVOL	VO = ±10V, RL		25	150	-	V/mV
			TA = 0° to +70°C	15	-	-	V/mV
Output Voltage Swing (Peak-to-Peak)	VO	RL = 10k Ohm		24	28	-	V
		RL >/= 10k Ohm	TA = 0° to +70°C	24	-	-	V
		RL >/= 2k Ohm		20	-	-	V
Common Mode Rejection Ratio	CMRR	RS		70	100	-	dB
Supply Voltage Rejection Ratio	PSRR	RS		70	100	-	dB
Supply Current (Each Amplifier)	ID			-	1.4	2.5	mA
Unity Gain Bandwidth	BW			-	4	-	MHz
Slew Rate	SR	VIN = 10V, RL = 2k Ohm, CL = 100pF		-	13	-	V/µs
Rise Time	tr			-	0.1	-	µs
Overshoot factor		VIN = 20mV, RL = 2k Ohm, CL = 100pF		-	10	-	%
Equivalent Input Noise Voltage	en	RS = 100 Ohm, f = 1000Hz		-	18	-	nV/(Sq Rt)Hz
Equivalent Input Noise Current	in	RS = 100 Ohm, f = 1000Hz		-	0.01	-	pA/(Sq Rt)Hz
Total Harmonic Distortion	THD	VO(rms) = 10V, RS L >/= 2k Ohm, f = 1000Hz		-	0.01	-	%
Channel Separation		AV = 100		-	120	-	dB

Note 3.

Input bias currents of JFET input operational amplifiers approximately double for every 10°C rise in junction temperature. To maintain junction temperature as close to ambient temperature as possible, pulse techniques must be used during test.

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