NTE464 (P-Ch)
Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications

See also >>> NTE465 (N-Ch)

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Drain-Source Voltage, VDS.......................................................... 25V
Drain-Gate Voltage, VDG............................................................ 30V
Gate-Source Voltage, VGS.........................................................±30V
Gate Current, IG.................................................................. 30mA
Total Device Dissipation (TA = +25°C), PD.........................................300mW
Derate Above 25°C.....................................................1.7mW/°C
Total Device Dissipation (TC = +25°C), PD.........................................800mW
Derate Above 25°C.................................................... 4.56mW/°C
Operating Junction Temperature, TJ...............................................+175°C
Storage Temperature Range, Tstg.......................................... -55° to +175°C


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

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