NTE276
Silicon Controlled Rectifier (SCR) Gate Controlled Switch

Features:
- Gate Turn−Off Thyristor
- High Speed Power Switching
- TV Horizontal Output
- Inverter and Converter Application
- Supplied in a Japanese TO66 Type Package

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Non−Repetitive Peak Off−State Voltage (TJ = −40° to +120°C, VGK = 0), VDSM...........1400V
Repetitive Peak Off−State Voltage (TJ = −40° to +120°C, VGK = 0), VDRM................ 1250V
DC On−State Anode Current (TC = +60°C), IT...........................................5A
Surge On−State Current (TC = +60°C), ITSM
t = 100μs.................................................................... 80A
t = 1ms.....................................................................33A
Peak Forward Gate Current (TC = +60°C, t = 1ms), IGFM.................................4A
Average Forward Gate Power Dissipation (TC = +60°C), PGF(AV).........................1W
Peak Reverse Gate Power Dissipation (TC = +60°C, t = 5μs), PGRM.....................30W
Average Reverse Gate Power Dissipation (TC = +60°C), PGR(AV).........................2W
Total Power Dissipation (TC = +25°C), PT............................................ 47.5W
Operating Junction Temperature Range, TJ.................................. −40° to +120°C
Storage Temperature Range, Tstg.......................................... −50° to +120°C
Thermal Resistance, Junction−to−Case, RthJC
Typical.................................................................. 1.3°C/W
Maximum...............................................................2.0°C/W


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