NPN Epitaxial Silicon Transistor 300V 500mA 20W hfe=240

Info as pdf-file
High Voltage General Purpose Applications
High Collector-Emitter Breakdown Voltage
Suitable for Transformer
Complement to MJE350

Collector-Base Voltage (VCBO): 300V
Collector-Emitter Voltage (VCEO): 300V
Emitter-Base Voltage (VEBO): 5V
Collector Current (IC): 500mA
Collector Dissipation (PC @TC=25°C): 20W
Junction Temperature (TJ): 150°C
Storage Temperature (STG): -65°C – +150°C
TO-126
Type: MJE340

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