PNP Transistor 500mA 300V Type MJE350

PNP Epitaxial Silicon Transistor, 300V, 500mA, 20W, hfe=240

Info as pdf-file
Type: MJE350

High Voltage General Purpose Applications
High Collector-Emitter Breakdown Voltage
Suitable for Transformer
Complement to MJE340

Collector-Base Voltage (VCBO): -300V
Collector-Emitter Voltage (VCEO): -300V
Emitter-Base Voltage (VEBO): -5V
Collector Current (IC): -500mA
Collector Dissipation (PC @TC=25°C): 20 W
Junction Temperature (TJ): 150°C
Storage Temperature (STG): -65°C – +150°C
TO-126

For more PNP-Transistors
Bipolar Junction Transistors (BJT) (our whole assortment)
Semiconductors (our whole assortment)

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