NTE72 NPN Transistor High Current Amplifier Fast Switch (Stud Mount) TO-61 (ISOL)
Info as pdf-file
Features:
- High Power: 100W @ TC = +50°C, VCE = 40V
- High Voltage: VCEO = 80V Min
- High Current Saturation Voltage: VCE(sat) = 1.5V @ 10A
- High Frequency: fT = 30MHz Min
- Isolated Collector Package, No Isolating Hardware Required
Absolute Maximum Ratings: (Note 1)
| Collector-Emitter Voltage, VCES |
100V |
| Collector-Emitter Voltage (Note 2), VCEO |
80V |
| Emitter-Base Voltage, VEBO |
6V |
| Collector Current, IC |
10A |
| Total Power Dissipation (TC = +50°C, VCE = 40V), PT |
100W |
| Operating Junction Temperature Range, Topr |
-65° to +200°C |
| Storage Temperature Range, Tstg |
-65° to +200°C |
| Lead Temperature (During Soldering, 60sec max), TL |
+300°C |
Note 1. These ratings are limiting values above which the serviceability of the NTE72 transistor may be impaired.
Note 2. This rating refers to a high current point where collector-emitter voltage is lowest.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
| Collector-Emitter Sustaining Voltage |
VCEO(sus) |
IC = 200mA, IB = 0, Note 2, Note 3 |
80 |
- |
- |
V |
| Collector-Emitter Breakdown Voltage |
V(BR)CES |
IC = 1mA, VBE = 0 |
100 |
- |
- |
V |
| Emitter-Base Breakdown Voltage |
V(BR)EBO |
IE = 1mA, IC = 0 |
6 |
- |
- |
V |
| DC Pulse Current Gain (Note 3) |
hFE |
IC = 100mA, VCE = 5V |
50 |
95 |
- |
|
| IC = 5A, VCE = 5V |
70 |
108 |
200 |
|
| IC = 5A, VCE = 5V, TC = -55°C |
35 |
51 |
- |
|
| IC = 10A, VCE = 5V |
45 |
91 |
- |
|
| High Frequency Current Gain |
hfe |
IC = 2A, VCE = 5V, f = 20MHz |
2.0 |
2.8 |
- |
|
| Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 5A, IB = 0.5A, Note 3 |
- |
0.55 |
0.9 |
V |
| IC = 10A, IB = 1A, Note 3 |
- |
1.1 |
1.5 |
V |
| Base-Emitter Saturation Voltage |
VBE(sat) |
IC = 5A, IB = 0.5A, Note 3 |
- |
1.2 |
1.8 |
V |
| IC = 10A, IB = 1A, Note 3 |
- |
1.7 |
2.2 |
V |
| Base-Emitter ON Voltage |
VBE(on) |
VCE = 2V, IC = 5A, Note 3 |
- |
- |
1.8 |
V |
| Collector Cutoff Current |
ICES |
VCE = 60V, VBE = 0 |
- |
0.014 |
1.0 |
µA |
| Collector Reverse Current |
ICEX |
VCE = 60V, VEB = 2V, TC = +150°C |
- |
- |
500 |
µA |
| Emmiter Cutoff Current |
IEBO |
VEB = 5V, IC = 0 |
- |
- |
1.0 |
µA |
| Collector-Base Capacitance |
Ccb |
VCB = 10V, IE = 0, f = 1MHz |
- |
235 |
275 |
pF |
Note 2. This rating refers to a high current point where collector-emitter voltage is lowest.
Note 3. Pulse Width = 300µs, Duty Cycle = 1%.
Pictures are a guide only actual product may vary. Subject to alterations and errors. Help us to eliminate errors:
Please report any errors here.
Are you searching for replacements of semiconductors?
The following link brings you to the search window of NTE Electronics (a world wide supplier of high quality electronic components). This QUICKCross software can assist users in selecting the proper NTE replacement device.
QUICKCross Search Engine for NTE Replacement Semiconductors
Our Assortment of NTE- Replacement Devices
Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.
Sprachen integrierter Schaltkreis integrated circuit, kurz IC, Mikrochip Microchip integreret kredsløb integreret kredslob circuito integrado (CI) circuit intégré (CI) circuit integre (CI) circuito integrato geïntegreerde schakeling geintegreerde schakeling Tümdevre Tuemdevre EEE
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components
