11.50CHF
ab 10 10.46CHF
ab 50 9.87CHF
ab 100 9.31CHF

NTE5620 Triac 8A 800V TO-220 Full Pack

Bestell-Nr.:    NTE5620


Verfügbarkeit:     PICTURE_ONLY_TWO
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NTE5620 NTE-5620 | ECG5620 ECG-5620 | NTE Electronics NTE5620
TRIAC 800V, 8A, TO-220 Full Pack

The NTE5620 TRIAC is designed primarily for full-wave AC control applications, such as light dimmers, heater controls, motor controls, and power supplies; or wherever full wave silicon gate controlled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied voltage with positive or negative gate triggering.

Features:
- Blocking Voltage - 800 Volts
- All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
- Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability
- Gate Triggering Guaranteed in Four Modes

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Peak Repetitive Off-State Voltage, VDRM
(TJ = -40° to +125°C, 1/2 Sine Wave 50 to 60HZ, Gate Open, Note 1).............800V
On-State Current RMS, IT(RMS)
(TC = +80°C, Full Cycle Sine Wave 50 to 60HZ, Note 2 )...........................8A
Peak Non-Repetitive Surge Current, ITSM
(One Full Cycle, 60Hz, TC = +125°C, Preceded and followed by rated current)...... 100A
Peak Gate Power (TC = +80°C, Pulse Width = 2μs), PGM...............................16W
Average Gate Power (TC = +80°C, t = 8.3ms), PG(AV)................................ 350mW
Peak Gate Current (Pulse Width = 2μs), IGM............................................ 4A
RMS Isolation Voltage (TA = +25°C, Relative Humidity ≤ 20%), V(ISO)...................1500V
Operating Junction Temperature Range, TJ.................................. -40° to +125°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.....................................2.2°C/W
Typical Thermal Resistance, Case-to-Sink, RthCS.................................. 2.2°C/W
Thermal Resistance, Junction-to-Ambient, RthJA.................................... 60°C/W

Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.
Note 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.


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Anmerkung zu den NTE/ECG Austauschhalbleiter:
NTE-Austauschhalbleiter (früher ECG Philips und Sylvania) sind sorgfältig ausgesuchte und erprobte Halbleiter, die einen sicheren Ersatz für Originaltypen verschiedenster Hersteller und Ursprünge für fast alle Applikationsbereiche im Wartungsdienst bieten.
Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen Plastikbeuteln verpackt, auf welchen die wichtigsten Daten vermerkt sind.
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