NTE5483
Silicon Controlled Rectifier (SCR) 200V, 8A, TO-64

See also >>> NTE5480 thru NTE5487

Description:
The NTE5480 through NTE5487 are multi-purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V.

Features:
- Uniform Low-Level Noise-Immune Gate Triggering: IGT = 10mA Typ @ TC = +25°C
- Low Forward “ON” Voltage: vT = 1V Typ @ 5A @ +25°C
- High Surge-Current Capability: ITSM = 100A Peak
- Shorted Emitter Construction

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings: (TJ = -40° to +100°C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM or VRRM
NTE5480.................................................................... 25V
NTE5481.................................................................... 50V
NTE5482...................................................................100V
NTE5483...................................................................200V
NTE5484...................................................................300V
NTE5485...................................................................400V
NTE5486...................................................................500V
NTE5487 (This device is discontinued)...................................... 600V
Forward Current RMS, IT(RMS)........................................................ 8A
Peak Forward Surge Current (One Cycle, 60Hz, TJ = -40° to +100°C, ITSM...............100A
Circuit Fusing (t ≤ 8.3ms, TJ = -40° to +100°C), I2t...................................40A2s
Peak Gate Power, PGM.............................................................5W
Average Gate Power, PG(AV)........................................................ 0.5W
Peak Gate Current, IGM.............................................................. 2A
Peak Gate Voltage (Note 2), VGM.................................................... 10V
Operating Temperature Range, TJ.......................................... -40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Typical Thermal Resistance, Junction-to-Case, RthJC.............................. 1.5°C/W
Typical Thermal Resistance, Case-to-Ambient, RthJA................................ 50°C/W

Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage.
Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode.


Unser Halbleiter Katalog (ohne NTE-Sortiment)
NTE Sortiment (unser ganzes Sortiment)
Einzel-Halbleiter (ganzes Sortiment)

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Anmerkung zu den NTE/ECG Austauschhalbleiter:
NTE-Austauschhalbleiter (früher ECG Philips und Sylvania) sind sorgfältig ausgesuchte und erprobte Halbleiter, die einen sicheren Ersatz für Originaltypen verschiedenster Hersteller und Ursprünge für fast alle Applikationsbereiche im Wartungsdienst bieten.
Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen Plastikbeuteln verpackt, auf welchen die wichtigsten Daten vermerkt sind.