NTE2409
Silicon PNP Transistor General Purpose Amp, Surface Mount

(Compl to NTE2408)

Description:
The NTE2409 is a silicon PNP general purpose transistor in a SOT-23 type surface mount package designed for use in driver stages of audio amplifiers in thick and thin-film hybrid circuits.

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Base Voltage, VCBO.......................................................80V
Collector-Emitter Voltage, VCEX...................................................... 80V
Collector-Emitter Voltage, VCEO...................................................... 65V
Emitter-Base Voltage, VEBO.......................................................... 5V
Collector Current, IC
Continuous...............................................................100mA
Peak.................................................................... 200mA
Peak Emitter Current, IEM........................................................ 200mA
Peak Base Current, IBM.......................................................... 200mA
Total Power Dissipation (TA = +60°C, Note 1), Ptot.................................. 200mW
Junction Temperature, TJ.........................................................+150°C
Storage Temperature Range, Tstg.........................................-65 ° to +150°C
Thermal Resistance, Junction-to-Tab, RthJT........................................ 60K/W
Thermal Resistance, Tab-to-Soldering Points, RthTS...............................280K/W
Thermal Resistance, Soldering Points-to-Ambient (Note 1), RthSA.................... 90K/W

Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Note 2. VBE decreases by about 2mV/K with increasing temperature.
Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.


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