NTE2330
Silicon NPN Transistor High Gain Amp w/Internal Zener Diode

Features:
- Excellent Wide Safe Operating Area
- Included Avalanche Diode
- High DC Current Gain
- High Collector Power Dissipation Capability

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO............................................ 55 (+15, -10) V
Collector-Emitter Voltage, VCEO...........................................55 (+15, -10) V
Emitter-Base Voltage, VEBO.......................................................... 5V
Collector Current, IC
Continuous...................................................................4A
Peak.......................................................................20A
Collector Dissipation (TC = +25°C), PC.............................................. 80W
Operating Junction Temperature, TJ...............................................+150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C


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