NTE2013
Integrated Circuit 7-Channel Darlington Array/Driver

See also >>> NTE2011/NTE2012/NTE2014/NTE2015

Description:
The NTE2011 through NTE2015 are high-voltage, high-current Darlington arrays in a 16-Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic substrate. All units have open-collector outputs and integral diodes for inductive load transient suppression.
Peak inrush currents to 600mA (NTE2011, NTE2013, NTE2014) or 750mA (NTE2012, NTE2015) are permissible, making them ideal for driving tungstun filament lamps.
The NTE2011 is a general purpose array that may be used with standard bi-polar digital logic using external current limiting, or with most PMOS or CMOS directly. This device is pinned with outputs opposite inputs to facilitate printed wiring board layouts.
The NTE2012 is designed for use with 14V to 25V PMOS devices. Each input has a Zener diode and resistor in series to limit the input current to a safe value in that application. The Zener diode also gives this device excellent noise immunity.
The NTE2013 has a 2.7kΩ series base resistor for each Darlington pair, allowing operation directly with TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface needs - particularly those beyond the capabilities of standard logic buffers.
The NTE2014 has a 10.5kΩ series input resistor that permits operation directly from CMOS or PMOS outputs utilizing supply voltages of 6V to 15V. The required input current is below that of the NTE2013, while the required input voltage is less than that required by the NTE2012.
The NTE2015 is designed for use with standard TTL and Schottky TTL, with which higher output currents are required and loading of the logic output is not a concern. This device will sink a minimum of 350mA when driven from a “totem pole” logic output.

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C for any one Darlington pair unless otherwise specified)
Output Voltage, VCE................................................................ 50V
Input Voltage, VIN
NTE2012, NTE2013, NTE2014................................................ 30V
NTE2015.................................................................... 15V
Continuous Collector Current. IC
NTE2011, NTE2013, NTE2014.............................................500mA
NTE2012, NTE2015.......................................................600mA
Continuous Input Current, IIN...................................................... 25mA
Power Dissipation, PD
One Darlington Pair.......................................................... 1W
Total Device (Note 1).........................................................2W
Operating Ambient Temperature Range, TA...................................-20° to +85°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C

Note 1. The NTE2015 is a discontinued device and no longer available.
Note 2. Derate at the rate of 16.6mW/°C above +25°C.
Note 3. Under normal operating conditions, these devices will sustain 350mA per output with VCE(sat) = 1.6V at +70°C with a pulse width of 20ms and a duty cycle of 34%.


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

Pictures are a guide only actual product may vary. Subject to alterations and errors. Help us to eliminate errors:
Please report any errors here.


Are you searching for replacements of semiconductors? The following link brings you to the search window of NTE Electronics (a world wide supplier of high quality electronic components). This QUICKCross software can assist users in selecting the proper NTE replacement device.

QUICKCross Search Engine for NTE Replacement Semiconductors

Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.