NTE918 High Speed Operational Amplifier 8-Pin Metal Can
Info als pdf File
To order >>> NTE918M (8-PIN DIP)
To order >>> NTE918SM (8-SOIC)
Description:
The NTE918, NTE918M, and NTE918SM are precision high speed operational amplifiers designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external components are necessary for operation. However, unlike most internally compensated amplifiers, external frequency compensation may be added for optimum performance. For inverting applications, feed-forward compensation will boost the slew rate to over 150V/µs and almost double the bandwidth. Overcompensation can be used with the amplifier for greater stability when maximum bandwidth is not needed. Further, a single capacitor can be added to reduce the 0.1% setting time to under 1µs.
The high speed and fast setting time of these OP amps make them useful in A/D converters, oscillators, active filters, sample and hold circuits, or general purpose amplifiers. These devices are easy to apply and offer an order of magnitude better AC performance than industry standards such as the NTE909 and the NTE909D.
Features:
- 15MHz Small Signal Bandwidth
- Guaranteed 50V/µs Slew Rate
- Maximum Bias Current of 250nA
- Operates from Supplies of ±5V to ±20V
- Internal Frequency Compensation
- Input and Output Overload Protected
- Pin Compatible with General Purpose OP Amps
- Available in 3 Different Case Styles:
8-Lead Metal Can: NTE918
8-Lead Mini DIP: NTE918M
8-Lead SOIC (Surface Mount): NTE918SM
Absolute Maximum Ratings:
| Supply Voltage, VS |
|
±20V |
| Power Dissipation (Note 1), PD |
|
500mW |
| Differential Input Current (Note 2), IID |
|
±10mA |
| Input Voltage (Note 3), VIN |
|
±15V |
| Output Short Circuit Duration, tS |
|
Indefinite |
| Operating Temperature Range, TA |
|
0°C to +70°C |
| Storage Temperature Range, Tstg |
|
-65°C to +150°C |
| Lead Temperature (During Soldering, 10sec), TL |
|
|
| NTE918 (Metal Can) |
|
+300°C |
| NTE918M (Plastic DIP) |
|
+260°C |
| NTE918SM (Surface Mount) |
|
|
| Vapor Phase (60sec) |
|
+215°C |
| Infrared (15sec) |
|
+215°C |
| Note 1. | The maximum junction temperature of thses devices is +110°C. For operating at elevated temperatures, the NTE918 must be derated based on a thermal resistance of +150°C/W junction to ambient, or +45°C/W, junction to case. The thermal resistance of the NTE918M and the NTE918SM is +100°C/W, junction to ambient. |
| Note 2. | The inputs are shunted with back-to-back diodes for overvoltage protection. Therefore, excessive current will flow if a differential input voltage in excess of 1V is applied between the inputs unless some limiting resistance is used. |
| Note 3. | For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage. |
Electrical Characteristics: (0° </= TA </= +70°C, ±5V </= VS </= ±20V, Note 4 unless otherwise specified)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Units |
| Input Offset Voltage |
VIO |
TA = +25°C |
- |
4 |
10 |
mV |
| |
- |
- |
15 |
mV |
| Input Offset Current |
IIO |
TA = +25°C |
- |
30 |
200 |
nA |
| |
- |
- |
300 |
nA |
| Input Bias Current |
IIB |
TA = +25°C |
- |
150 |
500 |
nA |
| |
- |
- |
750 |
nA |
| Input Resistance |
rI |
TA = +25°C |
0.5 |
3.0 |
- |
M Ohm |
| Supply Current |
ICC, IEE |
TA = +25°C |
- |
5 |
10 |
mA |
| Large Signal Voltage Gain |
Av |
TA = +25°C, VS = ±15V, VOUT = ±10V, RL >/= 2k Ohm |
25 |
200 |
- |
V/mV |
| VS = ±15V, VOUT = ±10V, RL >/= 2k Ohm |
20 |
- |
- |
V/mV |
| Slew Rate |
SR |
TA = +25°C, VS = ±15V, AV = 1, Note 5 |
50 |
70 |
- |
V/µs |
| Small Signal Bandwidth |
BW |
TA = +25°C, VS = ±15V |
- |
15 |
- |
MHz |
| Output Voltage Swing |
VO |
VS = ±15V, RL = 2k Ohm |
±12 |
±13 |
- |
V |
| Input Voltage Range |
VI |
VS = ±15V |
±11.5 |
- |
- |
V |
| Common-Mode Rejection Ratio |
CMRR |
|
100 |
- |
- |
dB |
| Power Supply Rejection Ratio |
PSRR |
|
65 |
80 |
- |
dB |
| Note 4. | Power supplies must be bypassed with a 0.1µF disc capacitor. |
| Note 5. | Slew rate is tested with VS = ±15V. VIN is stepped from -7.5V to +7.5V and vise versa. The slew rates between -5.0V and +5.0V and vise versa are tested and guaranteed to exceed 50V/µs. |
Fehler und Änderungen bei technischen Daten, Abmessungen und Preisen bleiben vorbehalten. Bild kann vom Original abweichen.
Hat sich ein Fehler eingeschlichen?
Bitte hier melden
Suchen Sie nach einem Ersatztypen?
Wir führen die NTE Austausch-Halbleiter in unserem Sortiment
Anmerkung zu den NTE/ECG Austauschhalbleiter:
NTE-Austauschhalbleiter (früher ECG Philips und Sylvania) sind sorgfältig
ausgesuchte und erprobte Halbleiter, die einen sicheren Ersatz
für Originaltypen verschiedenster Hersteller und Ursprünge für
fast alle Applikationsbereiche im Wartungsdienst bieten.
Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen
Plastikbeuteln verpackt, auf welchen die wichtigsten Daten
vermerkt sind.
Sprachen integrierter Schaltkreis integrated circuit, kurz IC, Mikrochip Microchip integreret kredsløb integreret kredslob circuito integrado (CI) circuit intégré (CI) circuit integre (CI) circuito integrato geïntegreerde schakeling geintegreerde schakeling Tümdevre Tuemdevre
