NTE784 IC 1W Multi-Purpose Wide-Band Power Amplifier 12-Lead Metal Can
Formerly: ECG784
Integrated Circuit
Wide-Band Power Amplifier
Description:
The NTE784 is a multi-stage, multi-purpose, wide-band power amplifier on a single monolithic silicon chip. This device employs a highly versatile and stable direct-coupled circuit configuration featuring wide frequency range, high voltage and power gain, and high power output. These features plus inherent stability over a wide temperature range make the NTE784 extremely useful for a wide variety of applications in military, industrial, and commercial equipment.
The NTE784 is particularly suited for service as a class B power amplifier and can provide a maximum power output of 1W from a 12V DC supply with a typical power gain of 75dB.
Features:
- High Power Output
- Wide Frequency Range
- High Power Gain
- Single Power Supply for Class B Operation with Transformer
- Built-In Temperature Tracking Voltage RTegulator Provides Stable Operation
Applications:
- AF Power Amplifier for Portable and Fixed Sound and Communications Systems
- Servo-Control Amplifier
- Wide-Band Linear Mixers
- Video Power Amplifiers
- Transmission-Line Driver Amplifier (Balanced and Unbalanced)
- Fan0In and Fan-Out Amplifiers for Computer Logic Circuits
- Lamp-Control Amplifiers
- Motor-Control Amplifiers
- Power Multivibrators
- Power Switches
Absolute Maximum Ratings:
| Power Dissipation (Without Heatsink, TA = +25°C), PD |
|
1W |
| Derate Above 25°C |
|
6.7mW/°C |
| Power Dissipation (With Heatsink, TC = +25°C), PD |
|
2W |
| Derate Above 25°C |
|
16.7mW/°C |
| Operating Temperature Range, Topr |
|
-55° to +125°C |
| Storage Temperature Range, Tstg |
|
-65° to +150°C |
| Maximum Thermal Resistance, Junction-to-Case, RthJC |
|
60°C/W |
Electrical Characteristics: (TA = +25°C unless otherwise specified)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
| Collector-Emitter Breakdown Voltage |
V(BR)CER |
(Q6 & Q7) IC = 10mA |
25 |
- |
- |
V |
| V(BR)CE0 |
(Q1) IC = 0.1mA |
10 |
- |
- |
V |
| Idle Currents |
I4, I7 |
(Q6 & Q7) VCC1 = 9V, VCC2 = 2V |
- |
5.5 |
- |
mA |
| Peak Output Currents |
I4, I7 |
(Q6 & Q7) VCC1 = 9V, VCC2 = 2V |
180 |
- |
- |
mA |
| Cutoff Currents |
I4, I7 |
(Q6 & Q7) VCC1 = 9V, VCC2 = 2V |
- |
- |
1.0 |
mA |
| Differential Amplifier Current Drain |
ICC1 |
VCC1 = 9V, VCC2 = 9V |
6.3 |
9.4 |
12.5 |
mA |
| Total Current Drain |
ICC1 + ICC2 |
VCC1 = 9V, VCC2 = 9V |
14.5 |
21.5 |
30.0 |
mA |
| Differential Amplifier Input Pin Voltages |
V2, V3 |
VCC1 = 9V, VCC2 = 2V |
- |
11.1 |
- |
V |
| Regulator Pin Voltage |
V11 |
VCC1 = 9V, VCC2 = 2V |
- |
2.35 |
- |
V |
| Collector-Emitter Cutoff Current |
ICEO |
(Q) VCC1 = 10V |
- |
- |
100 |
µA |
| Emitter-Base Cutoff Current |
IEBO |
(Q) VCC1 = 3V |
- |
- |
0.1 |
µA |
| Collector-Base Cutoff Current |
ICBO |
(Q) VCC1 = 3V |
- |
- |
0.1 |
µA |
| Forward Current Transfer Ratio |
hFE1 |
(Q1) IC = 3mA, VCC1 = 6V |
30 |
75 |
- |
|
| Bandwidth |
BW |
VCC1 = 6V, VCC2 = 6V, -3dB |
- |
8 |
- |
MHz |
| Maximum Power Output |
PO(max) |
VCC1 = 6V, VCC2 = 6V, RCC = 130 Ohm |
200 |
300 |
- |
mW |
| VCC1 = 9V, VCC2 = 9V, RCC = 130 Ohm |
400 |
550 |
- |
mW |
| VCC1 = 9V, VCC2 = 12V, RCC = 200 Ohm |
800 |
1000 |
- |
mW |
| Sensitivity |
eIN |
VCC1 = 9V, VCC2 = 12V, POUT = 800mW, RCC = 200 Ohm |
- |
50 |
100 |
mV |
| Input Resistance |
RIN3 |
VCC1 = 6V, VCC2 = 6V, Pin3 to GND |
- |
1000 |
- |
Ohm |
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Unser Halbleiter Katalog (ohne NTE-Sortiment)
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Anmerkung zu den NTE/ECG Austauschhalbleiter:
NTE-Austauschhalbleiter (früher ECG Philips und Sylvania) sind sorgfältig
ausgesuchte und erprobte Halbleiter, die einen sicheren Ersatz
für Originaltypen verschiedenster Hersteller und Ursprünge für
fast alle Applikationsbereiche im Wartungsdienst bieten.
Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen
Plastikbeuteln verpackt, auf welchen die wichtigsten Daten
vermerkt sind.
