162.45CHF
ab 10 152.82CHF
ab 50 145.71CHF
ab 100 139.17CHF

NTE366 NPN Si-Transistor 4A 16V Po=25W RF-50F6

Bestell-Nr.:    NTE366


Availability:     PICTURE_ONLY_ONE
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NTE366 NTE-366 | ECG366 ECG-366 | NTE Electronics NTE366
Silicon NPN Transistor RF Power Output
PO = 25W @ 512MHz

Description:
The NTE366 is a silicon NPN transistor designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.

Features:
- Specified 12.5 Volt, 470MHz Characteristic:
Output Power = 25 Watts
Minimum Gain = 6.2dB
Efficiency = 60%
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Built-In Matching Network for Broadband Operation
- Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16-volt High Line and Overdrive

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current-Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +150°C
Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7°C/W


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