NTE219 (PNP)
Silicon Power Transistor Audio Power Amp, Medium Speed Switch

See also >>> NTE130MP: matched pair of NTE130 with their DC Current Gain (hFE) matched to within 10% of each other.
See also >>> NTE130 (NPN)
See also >>> NTE219MCP: matched complementary pair containing 1 each of NTE219 (PNP) and NTE130 (NPN).

Description:
The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.

Features:
- DC Current Gain: hFE = 20 - 70 @ IC = 4A
- Collector-Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A
- Excellent Safe Operating Area

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 60V
Collector-Emitter Voltage, VCER...................................................... 70V
Collector-Base Voltage, VCB........................................................ 100V
Emitter-Base Voltage, VEB...........................................................7V
Continuous Collector Current, IC.....................................................15A
Base Current, IB.................................................................... 7A
Total Device Dissipation (TC = +25°C), PD...........................................115W
Derate Above 25°C.....................................................0.657W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 1.52°C/W

Note 1. Pulse Test: Pulse Width ≤ 300μs. Duty Cycle ≤ 2%.
Note 2. NTE130MP is a matched pair of NTE130 with their DC Current Gain (hFE) matched to within 10% of each other.
Note 3. NTE219MCP is a matched complementary pair containing 1 each of NTE219 (PNP) and NTE130 (NPN).


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