NTE72 NPN Transistor High Current Amplifier Fast Switch (Stud Mount) TO-61 (ISOL)
Info als pdf File
Features:
- High Power: 100W @ TC = +50°C, VCE = 40V
- High Voltage: VCEO = 80V Min
- High Current Saturation Voltage: VCE(sat) = 1.5V @ 10A
- High Frequency: fT = 30MHz Min
- Isolated Collector Package, No Isolating Hardware Required
Absolute Maximum Ratings: (Note 1)
| Collector-Emitter Voltage, VCES |
100V |
| Collector-Emitter Voltage (Note 2), VCEO |
80V |
| Emitter-Base Voltage, VEBO |
6V |
| Collector Current, IC |
10A |
| Total Power Dissipation (TC = +50°C, VCE = 40V), PT |
100W |
| Operating Junction Temperature Range, Topr |
-65° to +200°C |
| Storage Temperature Range, Tstg |
-65° to +200°C |
| Lead Temperature (During Soldering, 60sec max), TL |
+300°C |
Note 1. These ratings are limiting values above which the serviceability of the NTE72 transistor may be impaired.
Note 2. This rating refers to a high current point where collector-emitter voltage is lowest.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
| Collector-Emitter Sustaining Voltage |
VCEO(sus) |
IC = 200mA, IB = 0, Note 2, Note 3 |
80 |
- |
- |
V |
| Collector-Emitter Breakdown Voltage |
V(BR)CES |
IC = 1mA, VBE = 0 |
100 |
- |
- |
V |
| Emitter-Base Breakdown Voltage |
V(BR)EBO |
IE = 1mA, IC = 0 |
6 |
- |
- |
V |
| DC Pulse Current Gain (Note 3) |
hFE |
IC = 100mA, VCE = 5V |
50 |
95 |
- |
|
| IC = 5A, VCE = 5V |
70 |
108 |
200 |
|
| IC = 5A, VCE = 5V, TC = -55°C |
35 |
51 |
- |
|
| IC = 10A, VCE = 5V |
45 |
91 |
- |
|
| High Frequency Current Gain |
hfe |
IC = 2A, VCE = 5V, f = 20MHz |
2.0 |
2.8 |
- |
|
| Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 5A, IB = 0.5A, Note 3 |
- |
0.55 |
0.9 |
V |
| IC = 10A, IB = 1A, Note 3 |
- |
1.1 |
1.5 |
V |
| Base-Emitter Saturation Voltage |
VBE(sat) |
IC = 5A, IB = 0.5A, Note 3 |
- |
1.2 |
1.8 |
V |
| IC = 10A, IB = 1A, Note 3 |
- |
1.7 |
2.2 |
V |
| Base-Emitter ON Voltage |
VBE(on) |
VCE = 2V, IC = 5A, Note 3 |
- |
- |
1.8 |
V |
| Collector Cutoff Current |
ICES |
VCE = 60V, VBE = 0 |
- |
0.014 |
1.0 |
µA |
| Collector Reverse Current |
ICEX |
VCE = 60V, VEB = 2V, TC = +150°C |
- |
- |
500 |
µA |
| Emmiter Cutoff Current |
IEBO |
VEB = 5V, IC = 0 |
- |
- |
1.0 |
µA |
| Collector-Base Capacitance |
Ccb |
VCB = 10V, IE = 0, f = 1MHz |
- |
235 |
275 |
pF |
Note 2. This rating refers to a high current point where collector-emitter voltage is lowest.
Note 3. Pulse Width = 300µs, Duty Cycle = 1%.
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