NTE5629
TRIAC - 400VRM, 4Amp, TO-202

Description:
The NTE5629 TRIAC is a bi-directional triode thyristor in a TO202 type case. This device may be switched from off-state to conduction for either polarity of applied voltage with positive or negative gate-trigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed for control applications in lighting, heating, cooling, and static switching relays.

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Absolute Maximum Ratings:
Repetitive Peak Off-State Voltage (Gate Open, TJ = +110°C, Note 1), VDRM . . . . . . . . . . . . . . 400V
RMS On-State Current (TC = +80°C, Conduction Angle = 360°), IT(RMS) . . . . . . . . . . . . . . . . . . . 4A
Non-Repetitive Peak Surge On-State Current (One-Cycle, at 50Hz or 60Hz), ITSM . . . . . . . . 40A
Peak Gate-Trigger Current (for 3μs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A
Peak Gate-Power Dissipation (IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Average Gate-Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +150°C
Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W Typ
Electrical Characteristics: (At Specified Case Temperature)
Peak Off-State Current (Gate Open, TC = +110°C, VDRM = 400V, Note 1), IDRM . . . . . 0.5mA Max
Maximum On-State Voltage (TC = +25°C, IT = 4A, Note 1), VTM . . . . . . . . . . . . . . . . . . . . . 1.6V Max
DC Holding Current (Gate Open, TC = +25°C, Note 1), IHold . . . . . . . . . . . . . . . . . . . . . . . . 5mA Max
Critical Rate-of-Rise of Off-State Voltage, Critical dv/dt
(VD = 400V, Gate Open, TC = +110°C, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/μs
Critical rate-of-Rise of commutation Voltage, Commutating dv/dt
(VD = 400V, IT = 4A, Gate Unenergized, TC = +80°C, Note 1) . . . . . . . . . . . . . . . . . . . . 1V/μs
DC Gate-Trigger Current (VD = 12VDC, RL = 60Ω, TC = +25°C), IGT . . . . . . . . . . . . . . . . . 3mA Max
(T2+ Gate +, T2- Gate -) Quads I and III
(T2+ Gate -, T2- Gate +) Quads II and IV
DC Gate-Trigger Voltage (VD = 12VDC, RL = 60Ω, TC = +25°C), VGT . . . . . . . . . . . . . . . . . . 2V Max
Gate-Controlled Turn-On Time, Tgt
(VD = 400V, IGT = 80mA, tR = 0.1μs, IT = 6A (Peak), TC = +25°C) . . . . . . . . . . . . . . . . . . . 3μs

Note 1. All values apply in either direction.


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