NTE2311
Silicon NPN Transistor High Voltage, High Speed Switch

Description:
The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications.

Features:
- High Blocking Capability: VCEX = 1000V
- Wide Surge Area: ICSM = 55A @ 350V

Applications:
- Switchmode Power Supply
- DC/DC and DC/AC Converters
- Motor Control

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage, VCEO.....................................................450V
Collector-Emitter Voltage (VBE = -2.5V), VCEX.......................................1000V
Emitter-Base Voltage, VEBO.......................................................... 7V
Collector Current (tp ≤ 5ms), IC
Continuous.................................................................. 15A
Peak.......................................................................30A
Base Current (tp ≤ 5ms), IB
Continuous...................................................................4A
Peak.......................................................................20A
Power Dissipation, Ptot
TC = +25°C................................................................ 150W
TC = +60°C................................................................ 115W
Operating Junction Temperature Range, TJ.................................. -65° to +175°C
Thermal Resistance, Junction-to-Case, RthJC.......................................1°C/W


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