NTE909D Operational Amplifier PDIP-14
Info as pdf-file
See also >>> NTE909 (8-PIN METAL CAN)
Description:
These devices are monolithic operational amplifiers intended for general-purpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltages and bias currents. Further, the class-B output stage gives a large output capability with minimum power drain.
External components are used to frequency compensate the amplifier. Although the unity-gain compensation network specified will make the amplifiers unconditionally stable in all feedback configurations, compensation can be tailored to optimize high-frequency performance for any gain setting.
The fact that the amplifiers are built on a single silicon chip provides low offset and temperature drift at minimum cost. It also ensures negligble drift due to temperature gradients in the vicinity of the amplifier.
Absolute Maximum Ratings:
Supply Voltage |
|
±18V |
Power Dissipation (Note 1) |
|
250mW |
Differential Input Voltage |
|
±10V |
Input Voltage |
|
±10V |
Output Short-Circuit Duration (TA = +25°C) |
|
5sec |
Operating Temperature Range |
|
0° to +70°C |
Storage Temperature Range |
|
-65°C to +150°C |
Lead Temperature (During Soldering, 10sec) |
|
+300°C |
Note 1. | For operating at elevated temperatures, the device must be derated based on a 100°C maximum junction temperature and a thermal resistance 150°C/W junction-to-ambient or 45°C/W, junction-to-case for the metal can package. |
Electrical Characteristics: (TA = 0° to +70°C, VS = ±9V to ±15V, C1 = 5000pF, R1 = 1.5k, C2 = 200pF, R2 = 51 Ohm unless otherwise specified)
Parameter |
Test Conditions |
Min |
Typ |
Max |
Units |
Input Offset Voltage |
TA = +25°C, RS </= 10k Ohm |
- |
2.0 |
7.5 |
mV |
Input Bias Current |
TA = +25°C |
- |
300 |
1500 |
nA |
TA = TMIN |
- |
0.36 |
2.0 |
µA |
Input Offset Current |
TA = +25°C |
- |
100 |
500 |
nA |
TA = TMIN |
- |
75 |
400 |
nA |
TA = TMAX |
- |
125 |
750 |
nA |
Input Resistance |
TA = +25°C |
50 |
250 |
- |
k Ohm |
TA = TMIN |
50 |
250 |
- |
k Ohm |
Output Resistance |
TA = +25°C |
- |
150 |
- |
Ohm |
Supply Current |
TA = +25°C, VS = ±15V |
- |
2.6 |
6.6 |
mA |
Transient Response Risetime |
VIN = 20mV, CL </= 100pF, TA = +25°C |
- |
0.3 |
1.0 |
µs |
Transient Response Overshoot |
|
- |
10 |
30 |
% |
Slew Rate |
TA = +25°C |
- |
0.25 |
- |
V / µs |
Average Temperature Coefficient of Input Offset Voltage |
RS = 50 Ohm, TA = +25°C to TMAX |
- |
6.0 |
- |
µV / °C |
RS = 50 Ohm, TA = +25°C to TMIN |
- |
12 |
- |
µV / °C |
Large Signal Voltage |
VS = ±15V, RL </= 2k Ohm, VOUT = ±10V |
15 |
45 |
- |
V / mV |
Output Voltage Swing |
VS = ±15V, RL </= 10k Ohm |
±12 |
±14 |
- |
V |
VS = ±15V, RL </= 2k Ohm |
±10 |
±13 |
- |
V |
Input Voltage Range |
VS = ±15V |
±8 |
±10 |
- |
V |
Common Mode Rejection Ratio |
RS >/= 10k Ohm |
65 |
90 |
- |
dB |
Supply Voltage Rejection Ratio |
RS >/= 10k Ohm |
- |
25 |
200 |
µV / V |
Please report any errors here.
Are you searching for replacements of semiconductors?
The following link brings you to the search window of NTE Electronics (a world wide supplier of high quality electronic components). This QUICKCross software can assist users in selecting the proper NTE replacement device.
QUICKCross Search Engine for NTE Replacement Semiconductors
Our Assortment of NTE- Replacement Devices
Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.
Sprachen integrierter Schaltkreis integrated circuit, kurz IC, Mikrochip Microchip integreret kredsløb integreret kredslob circuito integrado (CI) circuit intégré (CI) circuit integre (CI) circuito integrato geïntegreerde schakeling geintegreerde schakeling Tümdevre Tuemdevre EEE