41.00CHF
ab 10 37.25CHF

NTE342 NPN Si-Transistor 2A 17V Po=6W 175MHz TO-220EC

Bestell-Nr.:    NTE342


Availability:     PICTURE_ONLY_ZERO
  on request !


NTE342 NTE-342 | ECG342 ECG-342 | NTE Electronics

NTE342 Silicon NPN Transistor RF Power Output

Formerly: ECG342

Silicon NPN Transistor RF Power Output
(PO = 6W, 175MHz)

Description:
The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.

Features: - High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
- Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz

Application:
- 4 to 5 Watt Output Power Amplifiers Applications in VHF band

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO.......................................................35V
Collector−Emitter Voltage (RBE = ∞), VCEO............................................ 17V
Emitter−Base Voltage, VEBO.......................................................... 4V
Collector Current, IC.................................................................2A
Collector Dissipation, PC
TA = +25°C.................................................................1.5W
TC = +25°C................................................................ 12.5W
Operating Junction Temperature, TJ...............................................+150°C
Storage Temperature Range, Tstg.......................................... −55° to +150°C
Thermal Resistance, Junction−to−Ambient, RthJA.................................... 83°C/W
Thermal Resistance, Junction−to−Case, RthJC...................................... 10°C/W


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