NTE224
Silicon NPN Transistor Final RF Power Output for CB PO = 4W, 50MHz

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO.......................................................60V
Collector−Emitter Voltage (RBE = 10Ω), VCER.......................................... 60V
Emitter−Base Voltage, VEBO.......................................................... 4V
Collector Current, IC
Continuous...................................................................2A
Peak........................................................................ 4A
Emitter Current, IE
Continuous.................................................................. −2A
Peak.......................................................................−4A
Collector Power Dissipation (TC = +25°C), PC.........................................10W
Junction Temperature, TJ.........................................................+175°C
Storage Temperature Range, Tstg.......................................... −65° to +175°C


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