NTE85 Silicon NPN Transistor 0.5A 30V General Purpose Amplifier TO-92
Info as pdf-file
Applications:
- Medium Power Amplifiers
- Class B Audio Outputs
- Hi-Fi Drivers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified
Collector-Base Voltage, VCBO |
50V |
Collector-Emitter Voltage, VCEO |
30V |
Emitter-Base Voltage, VEBO |
5V |
Continuous Collector Current, IC |
500mA |
Total Device Dissipation (TA = +25°C), PD |
625mW |
Derate above 25°C |
5.0mW/°C |
Operating Junction Temperature Range, TJ |
-55° to +150°C |
Storage Temperature Range, Tstg |
-55° to +150°C |
Thermal Resistance, Junction-to-Case, RthJC |
83.3°C/W |
Thermal Resistance, Junction-to-Ambient, RthJA |
200°C/W |
Note 1. | These ratings are limiting values above which the serviceability of any semiconductor may be impaired. |
Note 2. | These ratings are based on a maximum junction temperature of 150°C. |
Electrical Characteristics:(TA = +25°C unless otherwise specified)
Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
Collector-Emitter Breakdown Voltage |
V(BR)CEO |
IC = 10mA, IB = 0, Note 3 |
30 |
- |
- |
V |
Collector-Base Breakdown Voltage |
V(BR)CBO |
IC = 100µA, IE = 0 |
50 |
- |
- |
V |
Emitter-Base Breakdown Voltage |
V(BR)EBO |
IE = 100µA, IC = 0 |
5.0 |
- |
- |
V |
Collector Cutoff Current |
ICBO |
VCB = 20V, IE = 0 |
- |
- |
100 |
nA |
Emitter Cutoff Current |
IEBO |
VBE = 3V, IC = 0 |
- |
- |
100 |
nA |
DC Current Gain |
hFE |
VCE = 2V, IC = 50mA, Note 3 |
100 |
- |
300 |
- |
Base Emitter ON Voltage |
VBE(on) |
VCE = 2V, IC = 100mA, Note 3 |
0.5 |
- |
1.0 |
V |
Collector Emitter Saturation Voltage |
VCE(sat) |
IC = 100mA, IB = 5mA, Note 3 |
- |
- |
600 |
mV |
Current Gain-Bandwidth Product |
fT |
VCE = 2V, IC = 50mA |
100 |
- |
- |
MHz |
Collector-Base Capacitance |
Ccb |
VCB = 10V, IE = 0, f = 1MHz |
- |
- |
12 |
pF |
Note 3. | Pulse test: Pulse Width </= 300µs, Duty Cycle </= 2%. |
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