NTE78 Si NPN Transistor RF Power Output 3W 27MHz TO-202M
Info as pdf-file
Description:
The NTE78 is a silicon NPN epitaxial planer type transistor designed for use as 3 to 4 watt RF power
amplifiers in HF band mobile radio applications.
Features:
- High Power Gain
- Emitter Ballasted Construction for High Reliability and Good Performance
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector-Emitter Voltage (RBE = 10Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C
Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83°C/W
Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10°C/W
Electrical Characteristics: (T
C = +25°C unless otherwise specified)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
| Emitter-Base Breakdown Voltage |
V(BR)EBO |
IE = 1mA, IC = 0 |
5 |
- |
- |
V |
| Collector-Base Breakdown Voltage |
V(BR)CBO |
IC = 1mA, IE = 0 |
75 |
- |
- |
V |
| Collector-Emitter Breakdown Voltage |
V(BR)CER |
IC = 10mA, RBE = 10 Ohms |
75 |
- |
- |
V |
| Collector Cutoff Current |
ICBO |
VCB = 30V, IE = 0 |
- |
- |
100 |
µA |
| Emitter Cutoff Current |
IEBO |
VEB = 3V, IC = 0 |
- |
- |
100 |
µA |
| DC Forward Current Gain |
hFE |
VCE = 10V, IC = 100mA, Note 1 |
35 |
70 |
180 |
|
| Output Power |
PO |
VCC = 12V, Pin = 250mW, f = 27MHz |
6.0 |
7.5 |
- |
W |
| Collector Efficiency |
|
55 |
60 |
- |
% |
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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