NTE78 Si NPN Transistor RF Power Output 3W 27MHz TO-202M

Info as pdf-file

Description:
The NTE78 is a silicon NPN epitaxial planer type transistor designed for use as 3 to 4 watt RF power amplifiers in HF band mobile radio applications.
Features:
- High Power Gain
- Emitter Ballasted Construction for High Reliability and Good Performance

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO.......................................................75V
Collector-Emitter Voltage (RBE = 10Ω), VCER.......................................... 75V
Emitter-Base Voltage, VEBO.......................................................... 5V
Collector Current, IC.................................................................4A
Collector Dissipation (TA = +25°C), PC...............................................1.5W
Collector Dissipation (TC = +25°C), PC.............................................. 12.5W
Operating Junction Temperature, TJ...............................................+150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
Thermal Resistance, Junction-to-Ambient, RthJA...................................83°C/W
Thermal Resistance, Junction-to-Case, RthJC.....................................10°C/W


Electrical Characteristics: (T_C = +25°C unless otherwise specified)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Emitter-Base Breakdown Voltage	V(BR)EBO	IE = 1mA, IC = 0	5	-	-	V
Collector-Base Breakdown Voltage	V(BR)CBO	IC = 1mA, IE = 0	75	-	-	V
Collector-Emitter Breakdown Voltage	V(BR)CER	IC = 10mA, RBE = 10 Ohms	75	-	-	V
Collector Cutoff Current	ICBO	VCB = 30V, IE = 0	-	-	100	µA
Emitter Cutoff Current	IEBO	VEB = 3V, IC = 0	-	-	100	µA
DC Forward Current Gain	hFE	VCE = 10V, IC = 100mA, Note 1	35	70	180
Output Power	PO	VCC = 12V, Pin = 250mW, f = 27MHz	6.0	7.5	-	W
Collector Efficiency			55	60	-	%

Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.

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