NTE56010
TRIAC, 15A, 800V TO-220

See also >>> NTE56004 thru NTE56010

The NTE56004 thru NTE56010 series of TRIACs are designed primarily for full-wave AC control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

Features:
- Blocking Voltage from 200 to 800 Volts
- All Diffused and Glass Passivated Junctions
- Small, Rugged, TO220 package for Low Thermal Resistance, High Heat Dissipation and Durability
- Gate Triggering specified in Four Quadrants

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Peak Repetitive Off-State Voltage, (TJ = -40° to 125°C), VDRM
NTE56004................................................................ 200V
NTE56006................................................................ 400V
NTE56008................................................................ 600V
NTE56010................................................................ 800V
Peak Gate Voltage, VGM...........................................................10V
On-State Current RMS (Full Cycle Sine Wave 50 to 60Hz,TC = +90°C), IT(RMS)...........15A
Circuit Fusing (t = 8.3ms) I2t...................................................... 93A2s
Peak Surge Current (One Full Cycle, 60Hz, TC = +80°C), ITSM
Preceded and followed by rated current.......................................150A
Peak Gate Power (TC = +80°C, Pulse Width = 2μs), PGM.............................. 20W
Average Gate Power (TC = +80°C, t = 8.3ms), PG(AV).............................. 500mW
Peak Gate Current, IGM.............................................................2A
Operating Junction Temperature Range, TJ.................................-40° to +125°C
Storage Temperature Range, Tstg.........................................-40° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.....................................2°C/W


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