NTE5690
TRIAC − 600V, 40Amp, 1/2” Press Fit

See also >>> NTE5688, NTE5689

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Repetitive Peak Off−State Voltage (Gate Open, TJ = +110°C, Note 1), VDRM
NTE5688...................................................................200V
NTE5689...................................................................400V
NTE5690...................................................................600V
RMS On−State Current (TC = +80°C, Conduction Angle = 360°), IT(RMS).................. 40A
Non−Repetitive Peak Surge On−State Current (One−Cycle, at 50Hz or 60Hz), ITSM.......400A
Peak Gate−Trigger Current (for 3μs Max), IGTM........................................ 12A
Peak Gate−Power Dissipation (IGT ≤ IGTM), PGM...................................... 40W
Average Gate−Power Dissipation, PG(AV)...........................................750mW
Operating Temperature Range, Topr........................................ −40° to +110°C
Storage Temperature Range, Tstg.......................................... −40° to +150°C
Thermal Resistance, Junction−to−Case, RthJC.................................1.8°C/W Typ

Electrical Characteristics: (At Specified Case Temperature)
Peak Off−State Current, IDRM
(Gate Open, TC = +110°C, VDRM = Max Rating, Note 1)...................... 1mA Max
Maximum On−State Voltage (TC = +25°C, IT = 40A, Note 1), VTM.................... 2.0V Max
DC Holding Current (Gate Open, TC = +25°C, Note 1), IHold.......................60mA Max
Critical Rate−of−Rise of Off−State Voltage, Critical dv/dt
(VD = VDRM, Gate Open, TC = +110°C, Note 1)...............................200V/μs
Critical rate−of−Rise of commutation Voltage, Commutating dv/dt
(VD = VDRM, IT = 40A, Gate Unenergized, TC = +80°C, Note 1)...................3V/μs
DC Gate−Trigger Current (VD = 12VDC, RL = 30Ω, TC = +25°C), IGT
(T2+ Gate +, T2− Gate −) Quads I and III.................................100mA Max
(T2+ Gate −, T2− Gate +) Quads II and IV................................ 150mA Max
DC Gate−Trigger Voltage (VD = 12VDC, RL = 30Ω, TC = +25°C), VGT................ 2.5V Max
Gate−Controlled Turn−On Time, Tgt
(VD = 400V, IGT = 200mA, tR = 0.1μs, IT = 10A (Peak), TC = +25°C)................ 3μs

Note 1. All values apply in either direction.


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

Pictures are a guide only actual product may vary. Subject to alterations and errors. Help us to eliminate errors:
Please report any errors here.


Are you searching for replacements of semiconductors? The following link brings you to the search window of NTE Electronics (a world wide supplier of high quality electronic components). This QUICKCross software can assist users in selecting the proper NTE replacement device.

QUICKCross Search Engine for NTE Replacement Semiconductors

Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.