NTE5543
Silicon Controlled Rectifier (SCR) 35A, 200V TO-48

See also >>> NTE5541 thru NTE5548

Description:
The NTE5541 thru NTE5548 are silicon controlled rectifiers (SCR) packaged in a TO48 type case designed for industrial and consumer applications such as power supplies; battery chargers; temperature, motor, light and welder controls.

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Repetitive Peak Off-State Voltage (TJ = +100°C) VDRM
NTE5541.................................................................... 50V
NTE5542...................................................................100V
NTE5543...................................................................200V
NTE5544...................................................................300V
NTE5545...................................................................400V
NTE5546...................................................................500V
NTE5547...................................................................600V
NTE5548...................................................................800V
Repetitive Peak Reverse Voltage (TJ = +100°C) VRRM
NTE5541.................................................................... 50V
NTE5542...................................................................100V
NTE5543...................................................................200V
NTE5544...................................................................300V
NTE5545...................................................................400V
NTE5546...................................................................500V
NTE5547...................................................................600V
NTE5548...................................................................800V
RMS On-State Current (TC = +75°C), I(RMS)...........................................35A
Peak Surge (Non-Repetitive) On-State Current (One Cycle at 50Hz or 60Hz), ITSM.......300A
Peak Gate-Trigger Current (3μs Max), IGTM...........................................20A
Peak Gate-Power Dissipation (IGT ≤ IGTM for 3μs Max), PGM...........................20W
Average Gate Power Dissipation, PG(AV)...........................................500mW
Operating Temperature Range, Toper........................................ -40° to +150°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Typical Thermal Resistance, Junction-to-Case, RthJC.............................. 1.4°C/W


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Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.