NTE5526
Silicon Controlled Rectifier (SCR), 25A, 300V TO-48

See also >>> NTE5520 thru NTE5531

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Maximum Ratings and Characteristics:
Blocking State (TJ = +125°C unless otherwise specified)
Repetitive Peak Forward and Reverse Voltage, VDRM, VRRM
NTE5520.................................................................... 25V
NTE5521.................................................................... 50V
NTE5522...................................................................100V
NTE5523...................................................................150V
NTE5524...................................................................200V
NTE5525...................................................................250V
NTE5526...................................................................300V
NTE5527...................................................................400V
NTE5528...................................................................500V
NTE5529...................................................................600V
NTE5530...................................................................700V
NTE5531...................................................................800V
Non-Repetitive Transient Peak Forward and Reverse Voltage (t ≤ 5.0msec), VRSM
NTE5520.................................................................... 35V
NTE5521.................................................................... 75V
NTE5522...................................................................150V
NTE5523...................................................................225V
NTE5524...................................................................300V
NTE5525...................................................................350V
NTE5526...................................................................400V
NTE5527...................................................................500V
NTE5528...................................................................600V
NTE5529...................................................................780V
NTE5530...................................................................840V
NTE5531...................................................................960V
Forward and Reverse Leakage Current, (full cycle average), ID(av), IR(av)
NTE5520.................................................................. 6.5mA
NTE5521.................................................................. 6.5mA
NTE5522.................................................................. 6.5mA
NTE5523.................................................................. 6.5mA
NTE5524.................................................................. 6.0mA
NTE5525.................................................................. 5.5mA
NTE5526.................................................................. 5.0mA
NTE5527.................................................................. 4.0mA
NTE5528.................................................................. 3.0mA
NTE5529.................................................................. 2.5mA
NTE5530.................................................................2.25mA
NTE5531.................................................................. 2.0mA

Conducting State (TJ = +125°C unless otherwise specified)
RMS Forward Current, IT(rms)........................................................ 25A
Forward Current (180° Conduction), IT(av).............................................16A
Surge Current (at 60Hz), ITSM
1/2 Cycle...................................................................150A
3 Cycles...................................................................110A
10 Cycles...................................................................90A
I2t for Fusing (at 60Hz half-wave), I2t.............................................90A2sec
Forward Voltage Drop at TJ = +25°C, (IF = 16Adc), VTM................................ 1.7V
Thermal Characteristics
Operating Junction Temperature Range, TJ.................................. -65° to +125°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Max. Thermal Impedance, Junction-to-Case, RthJC................................ 1.3°C/W
Max. Thread Torque, Lubricated.................................................. 30in. lbs
Gate Parameters (TJ = +25°C unless otherwise specified)
Gate Current to Trigger (VFB = 12V), IGT............................................ 40mA
Gate Voltage to Trigger Over Temperature Range (VFB = 12V), VGT.....................3.0V
Non-Triggering Gate Voltage at TJ = +125°C (Rated VFB), VGNT.......................0.25V
Peak Forward Gate Current, IGFRM.................................................... 5A
Peak Reverse Gate Voltage, VGRM.................................................... 5V
Peak Gate Power, PGM.............................................................5W
Average Gate Power, PG(AV)........................................................ 0.5W
Switching State
Typical Turn-On Time (IT = 10A, 10-90%, VDRM = 10V, TJ = +25°C), ton.................. 3μs
Minimum di/dt (Linear to 5.0 IT(av)), di/dt............................................ 25A/μs
Typical Turn-Off Time, tq
(IT = 10A, TJ = +125°C, diR/dt = 10A/μs, dv/dt = 20Vμs Linear to 0.8 VDRM)......... 50μs
Typical dv/dt (Exp. to VDRM), dv/dt................................................ 100V/μs


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