NTE5471
Silicon Controlled Rectifier (SCR) 100V 5A TO-64

Info as pdf-file
This pdf includes: NTE5470, NTE5471, NTE5472, NTE5473, NTE5474, NTE5475, NTE5476

See also >>> NTE5470 thru 5476

Description:
The NTE5470 through NTE5476 are multi-purpose PNPN silicon controlled rectifiers in a TO64 type stud mount package suitable for industrial and consumer applications.

Features:
- Uniform Low-Level Noise-Immune Gate Triggering
- Low Forward “ON” Voltage
- High Surge-Current Capability

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings: (Apply over operating temperature range unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM, VRRM
NTE5470.................................................................... 50V
NTE5471...................................................................100V
NTE5472...................................................................200V
NTE5473...................................................................300V
NTE5474...................................................................400V
NTE5475...................................................................500V
NTE5476...................................................................600V
Forward Current RMS, ITRMS........................................................ 8A
Peak Forward Surge Current (One Cycle, 60Hz, TJ = -40° to +100°C), ITSM.............. 100A
Circuit Fusing (TJ = -40° to +100°C, t ≤ 8.3ms), I2t.................................40A2sec
Peak Gate Power, PGM.............................................................5W
Average Gate Power, PG(AV)........................................................ 0.5W
Peak Gate Current, IGM.............................................................. 2A
Peak Gate Voltage (Note 2), VGM.................................................... 10V
Operating Temperature Range, TJ.......................................... -40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.....................................2.5°C/W
Stud Torque...................................................................15 in. lb.

Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage.
Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode.


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