NTE5458
Silicon Controlled Rectifier (SCR) 4A, 600V Sensitive Gate TO-202

See also >>> NTE5452 thru NTE5458

Description:
The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR´s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse-blocking triode thyristors may be switched from off-state to conduction by a current pulse applied to the gate terminal. They are designed for control applications in lighting, heating, cooling, and static switching relays.

Info as pdf-file
NTE-ECG replacement list as pdf-file
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Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +100°C), VRRM
NTE5452.................................................................... 30V
NTE5453.................................................................... 50V
NTE5454...................................................................100V
NTE5455...................................................................200V
NTE5456...................................................................300V
NTE5457...................................................................400V
NTE5458...................................................................600V
Repetitive Peak Off-State Voltage (TC = +100°C), VDRXM
NTE5452.................................................................... 30V
NTE5453.................................................................... 50V
NTE5454...................................................................100V
NTE5455...................................................................200V
NTE5456...................................................................300V
NTE5457...................................................................400V
NTE5458...................................................................600V
RMS On-State Current, IT(RMS).......................................................4A
Peak Surge (Non-Repetitive) On-State Current (One Cycle at 50 or 60Hz), ITSM...........20A
Peak Gate-Trigger Current (3μs Max), IGTM............................................ 1A
Peak Gate-Power Dissipation (IGT ≤ IGTM for 3μs Max), PGM...........................20W
Average Gate Power Dissipation, PG(AV).......................................... 200mW
Operating Temperature Range, Topr........................................ -40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Typical Thermal Resistance, Junction-to-Case, RthJC.............................. +5°C/W


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