NTE5455
Silicon Controlled Rectifier (SCR) 4A, 200V Sensitive Gate TO-202

See also >>> NTE5452 thru NTE5458

Description:
The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR´s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse-blocking triode thyristors may be switched from off-state to conduction by a current pulse applied to the gate terminal. They are designed for control applications in lighting, heating, cooling, and static switching relays.

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +100°C), VRRM
NTE5452.................................................................... 30V
NTE5453.................................................................... 50V
NTE5454...................................................................100V
NTE5455...................................................................200V
NTE5456...................................................................300V
NTE5457...................................................................400V
NTE5458...................................................................600V
Repetitive Peak Off-State Voltage (TC = +100°C), VDRXM
NTE5452.................................................................... 30V
NTE5453.................................................................... 50V
NTE5454...................................................................100V
NTE5455...................................................................200V
NTE5456...................................................................300V
NTE5457...................................................................400V
NTE5458...................................................................600V
RMS On-State Current, IT(RMS).......................................................4A
Peak Surge (Non-Repetitive) On-State Current (One Cycle at 50 or 60Hz), ITSM...........20A
Peak Gate-Trigger Current (3μs Max), IGTM............................................ 1A
Peak Gate-Power Dissipation (IGT ≤ IGTM for 3μs Max), PGM...........................20W
Average Gate Power Dissipation, PG(AV).......................................... 200mW
Operating Temperature Range, Topr........................................ -40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Typical Thermal Resistance, Junction-to-Case, RthJC.............................. +5°C/W


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

Pictures are a guide only actual product may vary. Subject to alterations and errors. Help us to eliminate errors:
Please report any errors here.


Are you searching for replacements of semiconductors? The following link brings you to the search window of NTE Electronics (a world wide supplier of high quality electronic components). This QUICKCross software can assist users in selecting the proper NTE replacement device.

QUICKCross Search Engine for NTE Replacement Semiconductors

Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.