NTE5444
Silicon Controlled Rectifier (SCR) 8A, 200V TO-127
Only while stock lasts. Then replaced by NTE5448

See also >>>NTE5442 thru NTE5448

Description:
The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR´s) in a TO127 type package designed for high-volume consumer phase-control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltage regulators, vending machines, and lamp drivers.

Features:
- Small, Rugged Construction
- Practical Level Triggering and Holding Characteristics @ +25°C:
IGT = 7mA Typ
IHold = 6mA Typ
- Low “ON” Voltage: VTM = 1V Typ @ 5A @ +25°C
- High Surge Current Rating: ITSM = 80A

Info as pdf-file
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Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings: (Note 1, TJ = +100°C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), VDRM or VRRM
NTE5442.................................................................... 50V
NTE5444...................................................................200V
NTE5446...................................................................400V
NTE5448...................................................................600V
Non-Repetitive Peak Reverse Blocking Voltage (t = 5ms (max) duration), VRSM
NTE5442.................................................................... 75V
NTE5444...................................................................300V
NTE5446...................................................................500V
NTE5448...................................................................700V
RMS On-State Current (All Conduction Angles), IT(RMS).................................. 8A
Average On-State Current (TC = +73°C), IT(AV).......................................5.1A
Peak Non-Repetitive Surge Current, ITSM
(1/2 cycle, 60Hz preceeded and followed by rated current and voltage).............80A
Circuit Fusing (TJ = -40° to +100°C, t = 1ms to 8.3ms), I2t...........................25 A2 sec
Peak Gate Power, PGM.............................................................5W
Average Gate Power, PG(AV)...................................................... 500mW
Peak Forward Gate Current, IGM...................................................... 2A
Peak Reverse Gate Voltage, VRGM...................................................10V
Operating Junction Temperature Range, TJ.................................. -40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Maximum Thermal Resistance, Junction- to-Case, RthJC............................ 2.5°C/W
Typical Thermal Resistance, Junction- to-Ambient, RthJA.............................40°C/W

Note 1. NTE5446 is a discontinued device and is replaced by NTE5448.
Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied concurrently with a negative potential on the anode. When checking forward or reverse blocking capability, thyristor devices should not be tested with a constant current source in a manner that the voltage applied exceeds the rated blocking voltage.


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