NTE5414
Silicon Controlled Rectifier (SCR) 4A, 200V Sensitive Gate TO-126

See also >>> NTE5411 thru NTE5416

Description:
The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important.

Features:
- Passivated Surface for Reliability and Uniformity
- Power Rated at Economical Prices
- Practical Level Triggering and Holding Characteristics

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Absolute Maximum Ratings: (TC = +110°C unles otherwise specified)
Repetitive Peak Forward and Reverse Blocking Voltage, VDRM, VRRM (1/2 Sine Wave, RGK = 1000Ω, TC = -40° to +110°C, Note 1)
NTE5411.................................................................... 30V
NTE5412.................................................................... 60V
NTE5413...................................................................100V
NTE5414...................................................................200V
NTE5415...................................................................400V
NTE5416...................................................................600V
Non-Repetitive Peak Reverse Blocking Voltage , VRSM (1/2 Sine Wave, RGK = 1000Ω, TC = -40° to +110°C)
NTE5411...................................................................100V
NTE5412...................................................................100V
NTE5413...................................................................150V
NTE5414...................................................................250V
NTE5415...................................................................450V
NTE5416...................................................................650V
Average On-State Current, IT(AV)
TC = -40° to +110°C.........................................................2.6A
TC = +100°C................................................................ 1.6A
Surge On-State Current (TC = +90°C), ITSM
1/2 Sine wave, 60Hz.......................................................... 25A
1/2 Sine wave, 1.5ms.........................................................35A
Circuit Fusing (t = 8.3ms), I2t.....................................................2.6A2s
Peak Gate Power (Pulse Width = 10μs, TC = +90°C), PGM.............................. 0.5W

Note 1. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.

Absolute Maximum Ratings (Cont´d): (TC = +110°C unles otherwise specified)
Average Gate Power (t = 8.2ms, TC = +90°C), PG(AV).................................. 0.1W
Peak Forward Gate Current, IGM.................................................... 0.2A
Peak Reverse Gate Voltage, VRGM.................................................... 6V
Operating Junction Temperature Range, TJ.................................. -40° to +110°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.......................................3°C/W
Thermal Resistance, Junction-to-Ambient, RthJA.................................... 75°C/W
Mounting Torque (Note 2)........................................................ 6 in. lb.

Note 2. Torque rating applies with the use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.


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Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.