NTE3312 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch

Formerly: ECG3312

Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch

Features:
- High Input Impedance
- High Speed
- Low Saturation Voltage
- Enhancement Mode

Applications:
- High Power Switching
- Motor Control

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Raings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, VCES.................................................... 1200V
Gate−Emitter Voltage, VGES........................................................ ±20V
Collector Current, IC
DC.......................................................................... 8A
Pulse (1ms).................................................................16A
Collector Power Dissipation (TC = +25°C), PC........................................ 100W
Operating Junction Temperature, TJ...............................................+150°C
Storage Temperature Range, Tstg.......................................... −55° to +150°C

This product is discontinued.
Only while stock lasts.


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