NTE3045
Optoisolator Silicon NPN Darlington Phototransistor Output

Description:
The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6-Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay drivers but provides excellent performance in interfacing and coupling systems, phase and feedback controls, solid state relays, and general purpose switching circuits.

Features:
- High Sensitivity to Low Input Drive Current
- High Collector-Emitter Breakdown Voltage: V(BR)CEO = 80V (Min)
- High Input-Output Isolation Guaranteed: VISO = 7500V (Peak)

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Input LED
Reverse Voltage, VR.................................................................3V
Continuous Forward Current, IF.................................................... 60mA
LED Power Dissipation (TA = +25°C with Negligible Power in Output Detector), PD...... 120mW
Derate Above 25°C.................................................... 1.41mW/°C
Output Detector
Collector-Emitter Voltage, VCEO...................................................... 80V
Emitter-Collector Voltage, VECO.......................................................5V
Detector Power Dissipation (TA = +25°C with Negligible Power in Input LED), PD........ 150mW
Derate Above 25°C.................................................... 1.76mW/°C
Total Device
Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO...........7500V
Total Device Power Dissipation (TA = +25°C), PD.................................... 250mW
Derate Above 25°C.................................................... 2.94mW/°C
Operating Temperature Range, TA.......................................... -55° to +100°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
Lead Temperature (During Soldering for 10sec, 1/16” from Case), TL.................. +260°C

Note 1. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pin1 and Pin2 are common, and Pin4, Pin5, and Pin6 are common.


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