NTE2984
Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch

Features:
- Dynamic dv/dt Rating
- Logic Level Gate Drive
- RDS(on) Specified at VGS = 4V & 5V
- +175°C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Drain Current, ID
Continuous (VGS = 5V)
TC = +25°C...............................................................17A
TC = +100°C.............................................................. 12A
Pulsed (Note 1).............................................................. 68A
Total Power Dissipation (TC = +25°C), PD............................................ 60W
Derate Above 25°C...................................................... 0.40W/°C
Gate-Source Voltage, VGS.........................................................±10V
Single Pulsed Avalanche Energy (Note 2), EAS.......................................110mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt.........................................4.5V/ns
Operating Junction Temperature Range, TJ.................................. -55° to +175°C
Storage Temperature Range, Tstg.......................................... -55° to +175°C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL.......... +300°C
Mounting Torque, 6-32 or M3 Screw.....................................10 lbf•in (1.1 N•m)

Thermal Resistance:
Maximum Junction-to-Case, RthJC.......................................... 2.5K/W
Typical Case-to-Sink (Mounting surface flat, smooth, and greased), RthCS.......0.5K/W
Maximum Junction-to-Ambient (Free Air Operation), RthJA.....................62K/W

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 444μH, VDD = 25V, RG = 25Ω, Starting TJ = +175°C.
Note 3. ISD ≤ 17A, di/dt ≤ 140A/μs, VDD ≤ V(BR)DSS, TJ ≤ +175°C.


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