NTE2924 NTE-2924 | ECG2924 ECG-2924 | NTE Electronics
NTE2924
MOSFET
N-Ch, Enhancement Mode
High Speed Switch
Features:
- Dynamic dv/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25°C.................................................................6.8A
TC = +100°C................................................................ 4.3A
Pulsed Drain Current (Note 1), IDM...................................................27A
Power Dissipation (TC = +25°C), PD................................................ 150W
Derate Linearly Above 25°C...............................................1.2W/°C
Gate-to-Source Voltage, VGS.......................................................±20
Single Pulse Avalanche Energy (Note 2), EAS.......................................410mJ
Avalanche Current (Note 1), IAR.....................................................6.8A
Repetitive Avalanche Energy (Note 1), EAR.......................................... 15mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt.......................................... 3V/ns
Operating Junction Temperature Range, TJ.................................. -55° to +150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL.................+300°C
Mounting Torque (6-32 or M3 Screw).................................... 10 lbfin (1.1Nm)
Thermal Resistance, Junction-to-Case, RthJC.................................... 0.83°C/W
Thermal Resistance, Junction-to-Ambient, RthJA...................................40°C/W
Typical Thermal Resistance, Case-to-Sink (Flat, Greased Surface), RthCS...........0.24°C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. VDD = 50V, starting TJ = +25°C, L = 16mH, RG = 25Ω, IAS = 6.8A
Note 3. ISD ≤ 6.8A, di/dt ≤ 80A/μs, VDD ≤ 600V, TJ ≤ +150°C
Note 4. Pules Width ≤ 300μs, Duty Cycle ≤ 2%.
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