NTE2395
MOSFET N-Ch, Enhancement Mode High Speed Switch

Features:
- Dynamic dv/dt Rating
- +175°C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25°C (Note 1).......................................................... 50A
TC = +100°C.................................................................36A
Pulsed Drain Current (Note 2), IDM.................................................. 200A
Power Dissipation (TC = +25°C), PD................................................ 150W
Derate Linearly Above 25°C...............................................1.0W/°C
Gate-to-Source Voltage, VGS...................................................... ±20V
Single Pulse Avalanche Energy (Note 3), EAS.......................................100mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt.........................................4.5V/ns
Operating Junction Temperature Range, TJ.................................. -55° to +175°C
Storage Temperature Range, Tstg.......................................... -55° to +175°C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL.................+300°C
Mounting Torque (6-32 or M3 Screw).................................... 10 lbf
in (1.1N
m)
Thermal Resistance, Junction-to-Case, RthJC.....................................1.0°C/W
Thermal Resistance, Junction-to-Ambient, RthJA...................................62°C/W
Typical Thermal Resistance, Case-to-Sink (Flat, Greased Surface), RthCS............ 0.5°C/W

Note 1. Current limited by the package, (Die Current = 51A).
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. VDD = 25V, starting TJ = +25°C, L = 44μH, RG = 25Ω, IAS = 51A
Note 4. ISD ≤ 51A, di/dt ≤ 250A/μs, VDD ≤ V(BR)DSS, TJ ≤ +175°C


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