NTE2383
MOSFET P-Channel Enhancement Mode, High Speed Switch

(Compl to NTE2382)

Description:
The NTE2383 is a MOS power P-Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Features:
- Lower RDS(ON)
- Improved Inductive Ruggedness
- Fast Switching Times
- Rugged Polysilicon Gate Cell Structure
- Lower Input Capacitance
- Extended Safe Operating Area
- Improved High Temperature Reliability

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximim Ratings:
Drain-Source Voltage (Note 1), VDSS................................................ 100V
Drain-Gate Voltage (RGS = 1MΩ, Note 1), VDGR...................................... 100V
Gate-Source Voltage, VGS.........................................................±20V
Continuous Drain Current, ID
TC = +25°C................................................................ 10.5A
TC = +100°C................................................................ 7.5A
Drain Current, Pulsed (Note 3), IDM...................................................42A
Gate Current, Pulsed, IGM.........................................................±1.5A
Single Pulsed Avalanvhe Energy (Note 4), EAS...................................... 510mJ
Avalanche Current, IAS............................................................ 10.5A
Total Power Dissipation (TC = +25°C), PD............................................ 75W
Derate Above 25°C.......................................................0.6W/°C
Operating Junction Temperature Range, Topr................................ -55° to +150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
Thermal Resistance, Junction-to-Ambient, RthJA.................................. 62.5°C/W
Thermal Resistance, Junction-to-Case, RthJC.................................... 1.67°C/W
Thermal Resistance, Case-to-Sink (Note 5), RthCS.................................0.5°C/W
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL.............. +300°C

Note 1. TJ = +25° to +150°C
Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
Note 4. L = 8.5mH, VDD = 25V, RG = 25Ω, Starting TJ = +25°C.
Note 5. Mounting surface flat, smooth, and greased.


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

Pictures are a guide only actual product may vary. Subject to alterations and errors. Help us to eliminate errors:
Please report any errors here.


Are you searching for replacements of semiconductors? The following link brings you to the search window of NTE Electronics (a world wide supplier of high quality electronic components). This QUICKCross software can assist users in selecting the proper NTE replacement device.

QUICKCross Search Engine for NTE Replacement Semiconductors

Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.