NTE2377
MOSFET N-Channel, Enhancement Mode, High Speed

Description:
The NTE2377 is an N-Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control.

Features:
- Low ON-State Resistance
- Very High-Speed Switching
- Converters

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain-Source Voltage, VDSS........................................................ 900V
Gate-Source Voltage, VGSS........................................................ ±30V
DC Drain Current, ID.................................................................8A
Pulsed Drain Current (Note 1), IDP.................................................... 36A
Allowable Power Dissipation (TC = +25°C), PD.......................................150W
Maximum Channel Temperature, Tch...............................................+150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C

Note 1. Pulse Width ≤ 10μs, Duty Cycle ≤ 1%.
Note 2. Be careful in handling the NTE2377 because it has no protection diode between gate and source.


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