NTE2362 (PNP)
Silicon Complementary Transistors High Speed Switch

See also >>> NTE2361 (NPN)

Description:
The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general- purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits.

Features:
- Very Small-Sized Package
- High Breakdown Voltage: VCEO = 50V

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO.......................................................60V
Collector-Emitter Voltage, VCEO...................................................... 50V
Emitter-Base Voltage, VEBO.......................................................... 5V
Collector Current, IC
Continuous...............................................................500mA
Peak.................................................................... 800mA
Collector Dissipation, PC........................................................ 300mW
Operating Junction Temperature Range, TJ.................................. -55° to +150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C

Note 1. For PNP device (NTE2362), voltage and current values are negative.


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