NTE2345 (NPN)
Silicon Complementary Transistors General Purpose Darlington, Power Amplifier

See also >>> NTE2346 (PNP)

Description:
The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT-82 type package designed for use in audio output stages and general amplifier and switching applications..

Features:
- High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V
- Junction Temperature to +150°C

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO.....................................................120V
Collector-Base Voltage, VCBO...................................................... 120V
Emitter-Base Voltage, VEBO.......................................................... 5V
Collector Current, IC
Continuous...................................................................6A
Peak (tp ≤ 10ms, δ ≤ 0.1)...................................................... 10A
Base Current, IB................................................................ 150mA
Total Power Dissipation (TC = +25°C), PD............................................ 60W
Junction Temperature, TJ.........................................................+150°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.....................................2.08K/W
Thermal Resistance, Junction-to-Ambient, RthJA...................................100K/W


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