NTE2333 NTE-2333 | ECG2333 ECG-2333 | NTE Electronics
NTE2333
Silicon NPN Power Transistor
for Switching Power Applications
Description:
The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line-
operated Switchmode Power supplies and electronic light ballasts.
Features:
- Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain hFE
Fast Switching
No Coil Required in Base Circuit for Turn-Off (No Current Tail)
Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams
Absolute Maximum Ratings:
Collector-Emitter Sustaining Voltage, VCEO...........................................450V
Collector-Emitter Breakdown Voltage, VCES.........................................1000V
Emitter-Base Voltage, VEBO.......................................................... 9V
Collector Current, IC
Continuous...................................................................6A
Peak (Note 1)................................................................ 15A
Base Current, IB
Continuous...................................................................4A
Peak (Note 1).................................................................8A
Total Power Dissipation (TC = +25°C), PD...........................................100W
Derate above 25°C.......................................................0.8W/°C
Junction Temperature, TJ.........................................................+150°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Maximum Thermal Resistance, Junction-to-Case, RthJC...........................1.25°C/W
Maximum Thermal Resistance, Junction-to-Ambient, RthJA........................ 62.5°C/W
Maximum Lead Temperature (During Soldering, 1/8” from Case for 5sec), TL...........+260°C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Note 2. Proper strike and creepage distance must be provided.
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