NTE2315
Silicon NPN Transistor Fast Switching Power Darlington

Description:
The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package with an integrated base-emitter speed-up diode designed for use in high voltage, high current, fast switching applications. In particular, the NTE2315 can be used in horizontal output stages of 110° CRT video displays and is primarily intended for large screen displays.

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Base Voltage (IE = 0), VCBO...............................................400V
Collector-Emitter Voltage (VBE = -6V), VCEV.......................................... 400V
Collector-Emitter Voltage (IB = 0), VCEO.............................................. 200V
Emitter-Base Voltage (IC = 0), VEBO...................................................6V
Collector Current, IC
Continuous...................................................................8A
Peak.......................................................................15A
Base Current, IB.................................................................... 2A
Damper Diode Peak Forward Current, IDM.............................................10A
Total Power Dissipation (TC ≤ +25°C), Ptot............................................ 60W
Operating Junction Temperature, TJ...............................................+150°C
Storage Temperatuere Range, Tstg.........................................-65° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 2.08°C/W
Thermal Resistance, Junction-to-Ambient, RthJA...................................70°C/W


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