NTE918 High Speed Operational Amplifier 8-Pin Metal Can
Info as pdf-file
To order >>> NTE918M (8-PIN DIP)
To order >>> NTE918SM (8-SOIC)
Description:
The NTE918, NTE918M, and NTE918SM are precision high speed operational amplifiers designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external components are necessary for operation. However, unlike most internally compensated amplifiers, external frequency compensation may be added for optimum performance. For inverting applications, feed-forward compensation will boost the slew rate to over 150V/µs and almost double the bandwidth. Overcompensation can be used with the amplifier for greater stability when maximum bandwidth is not needed. Further, a single capacitor can be added to reduce the 0.1% setting time to under 1µs.
The high speed and fast setting time of these OP amps make them useful in A/D converters, oscillators, active filters, sample and hold circuits, or general purpose amplifiers. These devices are easy to apply and offer an order of magnitude better AC performance than industry standards such as the NTE909 and the NTE909D.
Features:
- 15MHz Small Signal Bandwidth
- Guaranteed 50V/µs Slew Rate
- Maximum Bias Current of 250nA
- Operates from Supplies of ±5V to ±20V
- Internal Frequency Compensation
- Input and Output Overload Protected
- Pin Compatible with General Purpose OP Amps
- Available in 3 Different Case Styles:
8-Lead Metal Can: NTE918
8-Lead Mini DIP: NTE918M
8-Lead SOIC (Surface Mount): NTE918SM
Absolute Maximum Ratings:
| Supply Voltage, VS |
|
±20V |
| Power Dissipation (Note 1), PD |
|
500mW |
| Differential Input Current (Note 2), IID |
|
±10mA |
| Input Voltage (Note 3), VIN |
|
±15V |
| Output Short Circuit Duration, tS |
|
Indefinite |
| Operating Temperature Range, TA |
|
0°C to +70°C |
| Storage Temperature Range, Tstg |
|
-65°C to +150°C |
| Lead Temperature (During Soldering, 10sec), TL |
|
|
| NTE918 (Metal Can) |
|
+300°C |
| NTE918M (Plastic DIP) |
|
+260°C |
| NTE918SM (Surface Mount) |
|
|
| Vapor Phase (60sec) |
|
+215°C |
| Infrared (15sec) |
|
+215°C |
| Note 1. | The maximum junction temperature of thses devices is +110°C. For operating at elevated temperatures, the NTE918 must be derated based on a thermal resistance of +150°C/W junction to ambient, or +45°C/W, junction to case. The thermal resistance of the NTE918M and the NTE918SM is +100°C/W, junction to ambient. |
| Note 2. | The inputs are shunted with back-to-back diodes for overvoltage protection. Therefore, excessive current will flow if a differential input voltage in excess of 1V is applied between the inputs unless some limiting resistance is used. |
| Note 3. | For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage. |
Electrical Characteristics: (0° </= TA </= +70°C, ±5V </= VS </= ±20V, Note 4 unless otherwise specified)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Units |
| Input Offset Voltage |
VIO |
TA = +25°C |
- |
4 |
10 |
mV |
| |
- |
- |
15 |
mV |
| Input Offset Current |
IIO |
TA = +25°C |
- |
30 |
200 |
nA |
| |
- |
- |
300 |
nA |
| Input Bias Current |
IIB |
TA = +25°C |
- |
150 |
500 |
nA |
| |
- |
- |
750 |
nA |
| Input Resistance |
rI |
TA = +25°C |
0.5 |
3.0 |
- |
M Ohm |
| Supply Current |
ICC, IEE |
TA = +25°C |
- |
5 |
10 |
mA |
| Large Signal Voltage Gain |
Av |
TA = +25°C, VS = ±15V, VOUT = ±10V, RL >/= 2k Ohm |
25 |
200 |
- |
V/mV |
| VS = ±15V, VOUT = ±10V, RL >/= 2k Ohm |
20 |
- |
- |
V/mV |
| Slew Rate |
SR |
TA = +25°C, VS = ±15V, AV = 1, Note 5 |
50 |
70 |
- |
V/µs |
| Small Signal Bandwidth |
BW |
TA = +25°C, VS = ±15V |
- |
15 |
- |
MHz |
| Output Voltage Swing |
VO |
VS = ±15V, RL = 2k Ohm |
±12 |
±13 |
- |
V |
| Input Voltage Range |
VI |
VS = ±15V |
±11.5 |
- |
- |
V |
| Common-Mode Rejection Ratio |
CMRR |
|
100 |
- |
- |
dB |
| Power Supply Rejection Ratio |
PSRR |
|
65 |
80 |
- |
dB |
| Note 4. | Power supplies must be bypassed with a 0.1µF disc capacitor. |
| Note 5. | Slew rate is tested with VS = ±15V. VIN is stepped from -7.5V to +7.5V and vise versa. The slew rates between -5.0V and +5.0V and vise versa are tested and guaranteed to exceed 50V/µs. |
Pictures are a guide only actual product may vary. Subject to alterations and errors. Help us to eliminate errors:
Please report any errors here.
Are you searching for replacements of semiconductors?
The following link brings you to the search window of NTE Electronics (a world wide supplier of high quality electronic components). This QUICKCross software can assist users in selecting the proper NTE replacement device.
QUICKCross Search Engine for NTE Replacement Semiconductors
Our Assortment of NTE- Replacement Devices
Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.
Sprachen integrierter Schaltkreis integrated circuit, kurz IC, Mikrochip Microchip integreret kredsløb integreret kredslob circuito integrado (CI) circuit intégré (CI) circuit integre (CI) circuito integrato geïntegreerde schakeling geintegreerde schakeling Tümdevre Tuemdevre EEE
