NTE506
Silicon Rectifier Diode

Description:
The NTE506 is a silicon rectifier diode is an axial lead package designed for fast recovery, damper and blanking applications.

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Maximum Ratings and Electrical Characteristics:
(TA = +25°C unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%).
Peak Repetitive Reverse Voltage, VRRM.............................................1500V
Working Peak Reverse Voltage, VRWM.............................................. 1500V
DC Blocking Voltage, VR.......................................................... 1500V
RMS Reverse Voltage, VR(rms).....................................................1050V
Average Rectified Forward Current (TL = +55°C, Note 1), IO.......................... 500mA
Non−Repetitive Peak Forward Surge Current, IFSM
(8.3ms single half sine−wave superimposed on rated load)........................ 30A
Forward Voltage (IF = 500mA), VFM.................................................... 2V
Peak Reverse Current (VR = 1500V), IRM.............................................. 5μA
Typical Junction Capacitance (Note 2), Cj.............................................9pF
Typical Reverse Recovery Time (Note 3), trr.........................................500ns
Operating Temperature Range, Topr........................................ −65° to +125°C
Storage Temperature Range, Tstg.......................................... −65° to +125°C

Note 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from case.
Note 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Note 3. Measured with IF = 500mA, IR = −1A, Irr = −250mA.


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