NTE488
Silicon NPN Transistor RF Power Output

Description:
The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications.

Features:
- High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz
- TO39 Metal Sealed Package for High Reliability
- Emitter Electrode is Connected Electrically to the Case

Application:
1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications.

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO.......................................................35V
Emitter-Base Voltage, VEBO.......................................................... 4V
Collector Current, IC.................................................................1A
Collector Dissipation, PC
TA = +25°C.................................................................1W
TC = +25°C................................................................ 10W
Junction Temperature, Tj.........................................................+175°C
Storage Temperature Range, Tstg.......................................... -65° to +175°C
Thermal Resistance, Junction-to-Ambient, RthJA.................................. 150°C/W
Thermal Resistance, Junction-to-Case, RthJC.....................................15°C/W


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